SiC semiconductor is the focus of recent international research.It is also an important raw material for China to achieve carbon emission peak and carbon neutrality.After nearly 20 years of research and development,we...SiC semiconductor is the focus of recent international research.It is also an important raw material for China to achieve carbon emission peak and carbon neutrality.After nearly 20 years of research and development,we focus on the three types SiC crystals,n-type,p-type and semi-insulating,indicating the development of Shandong University for crystal growth.And defects control,electrical property,atomic polishing,and corresponding device authentication all obtain great progress.Total dislocation density of 6-inch n-type substrates decreases to 2307 cm^(-2),where BPD(Basal Plane Dislocation)lowers to 333 cm^(-2) and TSD(Threading Screw Dislocation)19 cm^(-2).The full width at half maximum(FWHM)(0004)rocking curves is only 14.4 arcsec.The resistivity reaches more than 1E+12Ω·cm for semi-insulating SiC and lower than 20 mΩ·cm for n-type SiC.The impurity concentrations in 6-inch high-purity semi-insulating(HPSI)SiC crystals reach extreme low levels.The devices made of various substrate materials have good performance.展开更多
The resistivities of vanadium-doped semi-insulating 4H-SiC wafers were measured by a contactless resistivity measurement system. Anomalous resistivity was found in semi-insulating 4H-SiC wafer. Raman spectra of semi-i...The resistivities of vanadium-doped semi-insulating 4H-SiC wafers were measured by a contactless resistivity measurement system. Anomalous resistivity was found in semi-insulating 4H-SiC wafer. Raman spectra of semi-insulating4H-SiC wafer indicated that the anomalous resistivity was caused by polytype inclusion. Based on the activation energies of different SiC polytypes calculated from resistivity versus temperature data measured by COREMA-VT, the resistivities in the vanadium-doped semi-insulating 4H-SiC wafer with 6H polytype inclusion were calculated. The calculated resistivities are quite consistent with the measured resistivities. Furthermore, the compensation mechanism for the formation of anomalous resistivity was proposed.展开更多
基金supported by the National Natural Science Foundation of China undergrant No.52022052 and No.51902182the Shandong Province Natural Science Foundation of China under grant No.ZR2019JQ01,ZR2019BEM030 and ZR2019BEM011Key R&D project of Shandong Province under grant No.2019JMRH0901 and 2019JMRH0201.
文摘SiC semiconductor is the focus of recent international research.It is also an important raw material for China to achieve carbon emission peak and carbon neutrality.After nearly 20 years of research and development,we focus on the three types SiC crystals,n-type,p-type and semi-insulating,indicating the development of Shandong University for crystal growth.And defects control,electrical property,atomic polishing,and corresponding device authentication all obtain great progress.Total dislocation density of 6-inch n-type substrates decreases to 2307 cm^(-2),where BPD(Basal Plane Dislocation)lowers to 333 cm^(-2) and TSD(Threading Screw Dislocation)19 cm^(-2).The full width at half maximum(FWHM)(0004)rocking curves is only 14.4 arcsec.The resistivity reaches more than 1E+12Ω·cm for semi-insulating SiC and lower than 20 mΩ·cm for n-type SiC.The impurity concentrations in 6-inch high-purity semi-insulating(HPSI)SiC crystals reach extreme low levels.The devices made of various substrate materials have good performance.
基金financially supported by National Basic Research Program of China (No. 2011CB301904)the Natural Science Foundation of China (Nos. 11134006 and 61327808)
文摘The resistivities of vanadium-doped semi-insulating 4H-SiC wafers were measured by a contactless resistivity measurement system. Anomalous resistivity was found in semi-insulating 4H-SiC wafer. Raman spectra of semi-insulating4H-SiC wafer indicated that the anomalous resistivity was caused by polytype inclusion. Based on the activation energies of different SiC polytypes calculated from resistivity versus temperature data measured by COREMA-VT, the resistivities in the vanadium-doped semi-insulating 4H-SiC wafer with 6H polytype inclusion were calculated. The calculated resistivities are quite consistent with the measured resistivities. Furthermore, the compensation mechanism for the formation of anomalous resistivity was proposed.
