Optimized operation scheme of flash-memory-based neural network online training with ultra-high endurance

With the rapid development of machine learning,the demand for high-efficient computing becomes more and more urgent.To break the bottleneck of the traditional Von Neumann architecture,computing-in-memory(CIM)has attracted increasing attention in recent years.In this work,to provide a feasible CIM solution for the large-scale neural networks(NN)requiring continuous weight updating in online training,a flash-based computing-in-memory with high endurance(10^(9) cycles)and ultrafast programming speed is investigated.On the one hand,the proposed programming scheme of channel hot electron injection(CHEI)and hot hole injection(HHI)demonstrate high linearity,symmetric potentiation,and a depression process,which help to improve the training speed and accuracy.On the other hand,the low-damage programming scheme and memory window(MW)optimizations can suppress cell degradation effectively with improved computing accuracy.Even after 109 cycles,the leakage current(I_(off))of cells remains sub-10pA,ensuring the large-scale computing ability of memory.Further characterizations are done on read disturb to demonstrate its robust reliabilities.By processing CIFAR-10 tasks,it is evident that~90%accuracy can be achieved after 109 cycles in both ResNet50 and VGG16 NN.Our results suggest that flash-based CIM has great potential to overcome the limitations of traditional Von Neumann architectures and enable high-performance NN online training,which pave the way for further development of artificial intelligence(AI)accelerators.

Flash-based in-memory computing for stochastic computing in image edge detection

The“memory wall”of traditional von Neumann computing systems severely restricts the efficiency of data-intensive task execution,while in-memory computing(IMC)architecture is a promising approach to breaking the bottleneck.Although variations and instability in ultra-scaled memory cells seriously degrade the calculation accuracy in IMC architectures,stochastic computing(SC)can compensate for these shortcomings due to its low sensitivity to cell disturbances.Furthermore,massive parallel computing can be processed to improve the speed and efficiency of the system.In this paper,by designing logic functions in NOR flash arrays,SC in IMC for the image edge detection is realized,demonstrating ultra-low computational complexity and power consumption(25.5 fJ/pixel at 2-bit sequence length).More impressively,the noise immunity is 6 times higher than that of the traditional binary method,showing good tolerances to cell variation and reliability degradation when implementing massive parallel computation in the array.

P-type cold-source field-effect transistors with TcX_(2) and ReX_(2)(X=S,Se)cold source electrodes:A computational study

Cold-source field-effect transistors(CS-FETs)have been developed to overcome the major challenge of power dissipation in modern integrated circuits.Cold metals suitable for n-type CS-FETs have been proposed as the ideal electrode to filter the high-energy electrons and break the thermal limit on subthreshold swing(SS).In this work,regarding the p-type CS-FETs,we propose TcX_(2) and ReX_(2)(X=S,Se)as the injection source to realize the sub-thermal switching for holes.First-principles calculations unveils the cold-metal characteristics of monolayer TcX_(2) and ReX_(2),possessing a sub-gap below the Fermi level and a decreasing DOS with energy.Quantum device simulations demonstrate that TcX_(2) and ReX_(2) can enable the cold source effects in WSe_(2) p-type FETs,achieving steep SS of 29-38 mV/dec and high on/off ratios of(2.3-5.6)×10^(7).Moreover,multilayer Re S2retains the cold metal characteristic,thus ensuring similar CS-FET performances to that of the monolayer source.This work underlines the significance of cold metals for the design of p-type CS-FETs.

A gate-tunable artificial synapse based on vertically assembled van der Waals ferroelectric heterojunction

Memtransistor,a multi-terminal device that combines both the characteristics of a memristor and a transistor,has been intensively studied in two-dimensional layered materials(2 DLM),which show potential for applications in such as neuromorphic computation.However,while often based on the migration of ions or atomic defects in the conduction channels,performances of memtransistors suffer from the poor reliability and tunability.Furthermore,those known 2 DLM-based memtransistors are mostly constructed in a lateral manner,which hinders the further increasing of the transistor densities per area.Until now,fabricating non-atomic-diffusion based memtransistors with vertical structure remains challenging.Here,we demonstrate a vertically-integrated ferroelectric memristor by hetero-integrating the 2 D ferroelectric materials CuInP_(2)S_(6)(CIPS)into a graphite/CuInP_(2)S_(6)/MoS_(2)vertical heterostructure.Memristive behaviour and multi-level resistance states were realized.Essential synaptic behaviours including excitatory postsynaptic current,paired-pulse-facilitation,and spike-amplitude-dependent plasticity are successfully mimicked.Moreover,by applying a gate potential,the memristive behaviour and synaptic features can be effectively gate tuned.Our findings pave the way for the realization of novel gate-tunable ferroelectric synaptic devices with the capability to perform complex neural functions.

Femtosecond laser processing of microcavity lasers

In this paper, we reviewed the fabrications of functional microcavity lasers in soft materials such as polymer and protein by femtosecond laser processing. High-quality （Q） microdisks with a laser dye （Rhodamine B, RhB） acting as gain medium were fabricated that produced whispering-gallery-mode （WGM） lasing output. We also obtained unidirectional lasing output with a low lasing threshold in a deformed spiral microcavity at room temperature. Photonic-molecule （PM） microlasers were prepared to investigate the interaction and coupling effects of different cavities, and it was found that the distance between the two disks plays an important role in the lasing behaviors. Single-mode lasing was realized from a stacked PM microlaser through Vernier effect. Furthermore we adopted the biocompatible materials, RhB-doped proteins as a host material and fabricated a three-dimensional （3D） WGM microlaser, which operated well both in air and aqueous environment. The sensing of the protein micro- lasers to Na2SO4 concentration was investigated. Our results of fabricating high-Q microlasers with different materials reveal the potential applications of femtosecond laser processing in the areas of integrated optoelectronic and ultrahigh sensitive bio-sensing devices.