Spin-orbit torque(SOT)effect is considered as an efficient way to switch the magnetization and can inspire various high-performance spintronic devices.Recently,topological insulators(TIs)have gained extensive attentio...Spin-orbit torque(SOT)effect is considered as an efficient way to switch the magnetization and can inspire various high-performance spintronic devices.Recently,topological insulators(TIs)have gained extensive attention,as they are demonstrated to maintain a large effective spin Hall angle(θeff SH),even at room temperature.However,molecular beam epitaxy(MBE),as a precise deposition method,is required to guarantee favorable surface states of TIs,which hinders the prospect of TIs towards industrial application.In this paper,we demonstrate that Bi2Te3 films grown by magnetron sputtering can provide a notable SOT effect in the heterostructure with perpendicular magnetic anisotropy CoTb ferrimagnetic alloy.By harmonic Hall measurement,a high SOT efficiency(8.7±0.9 Oe/(10^9 A/m^2))and a largeθ^eff SH(3.3±0.3)are obtained at room temperature.Besides,we also observe an ultra-low critical switching current density(9.7×10^9 A/m^2).Moreover,the low-power characteristic of the sputtered Bi2Te3 film is investigated by drawing a comparison with different sputtered SOT sources.Our work may provide an alternative to leverage chalcogenides as a realistic and efficient SOT source in future spintronic devices.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61971024 and 51901008)Young Elite Scientist Sponsorship Program by CAST(Grant No.2017QNRC001)+2 种基金the International Mobility Project(Grant No.B16001)National Key Technology Program of China(Grant No.2017ZX01032101)P.K.A.acknowledges support by a grant from the National Science Foundation,Division of Electrical,Communications and Cyber Systems(NSF ECCS-1853879).
文摘Spin-orbit torque(SOT)effect is considered as an efficient way to switch the magnetization and can inspire various high-performance spintronic devices.Recently,topological insulators(TIs)have gained extensive attention,as they are demonstrated to maintain a large effective spin Hall angle(θeff SH),even at room temperature.However,molecular beam epitaxy(MBE),as a precise deposition method,is required to guarantee favorable surface states of TIs,which hinders the prospect of TIs towards industrial application.In this paper,we demonstrate that Bi2Te3 films grown by magnetron sputtering can provide a notable SOT effect in the heterostructure with perpendicular magnetic anisotropy CoTb ferrimagnetic alloy.By harmonic Hall measurement,a high SOT efficiency(8.7±0.9 Oe/(10^9 A/m^2))and a largeθ^eff SH(3.3±0.3)are obtained at room temperature.Besides,we also observe an ultra-low critical switching current density(9.7×10^9 A/m^2).Moreover,the low-power characteristic of the sputtered Bi2Te3 film is investigated by drawing a comparison with different sputtered SOT sources.Our work may provide an alternative to leverage chalcogenides as a realistic and efficient SOT source in future spintronic devices.
