Sb_(2)Se_(3) film with grain size over 10μm toward X-ray detection

Direct X-ray detectors are considered as competitive next-generation X-ray detectors because of their high spatial resolution,high sensitivity,and simple device configuration.However,their potential is largely limited by the imperfections of traditional materials,such as the low crystallization temperature of α-Se and the low atomic numbers of α-Si and α-Se.Here,we report the Sb_(2)Se_(3) X-ray thin-film detector with a p-n junction structure,which exhibited a sensitivity of 106.3 μC/(Gyair·cm^(2))and response time of<2.5 ms.This decent performance and the various advantages of Sb_(2)Se_(3),such as the average atomic number of 40.8 and μτ product(μ is the mobility,and τ is the carrier lifetime)of 1.29×1O^(-5) cm^(2)/V,indicate its potential for application in X-ray detection.

Rapid thermal evaporation for cadmium selenide thin-film solar cells

Cadmium selenide(CdSe)belongs to the binary II-VI group semiconductor with a direct bandgap of~1.7 eV.The suitable bandgap,high stability,and low manufacturing cost make CdSe an extraordinary candidate as the top cell material in silicon-based tandem solar cells.However,only a few studies have focused on CdSe thin-film solar cells in the past decades.With the advantages of a high deposition rate(~2µm/min)and high uniformity,rapid thermal evaporation(RTE)was used to maximize the use efficiency of CdSe source material.A stable and pure hexagonal phase CdSe thin film with a large grain size was achieved.The CdSe film demonstrated a 1.72 eV bandgap,narrow photoluminescence peak,and fast photoresponse.With the optimal device structure and film thickness,we finally achieved a preliminary efficiency of 1.88%for CdSe thin-film solar cells,suggesting the applicability of CdSe thin-film solar cells.

Filter-free self-power CdSe/Sb_(2)(S_(1-x),Se_(x))_(3)nearinfrared narrowband detection and imaging

Accurate and clear bioimaging is crucial in the field of medical diagnosis.High-quality bioimaging requires to avoid the effects of ambient light as well as the absorption of biological tissues.Nearinfrared(NIR)narrowband detectors located at wavelength from 650 to 900 nm can meet these requirements;thus,they are the potential solution.In this work,we construct a filter-free and self-power NIR narrowband photodetector based on the structure of n-CdSe/p-Sb_(2)(S_(1-x),Se_(x))_(3)heterojunction,and achieve a narrow spectral response at 735 nm with a full width at half-maximum of 35.3 nm in the detector.Further,the imaging characteristics of the NIR narrowband detector are explored,verifying the ability to narrowband detection and imaging.This filter-free and self-power NIR narrowband detector shows considerable promise in real-life applications.