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Grain growth kinetics and densification mechanism of(TiZrHfVNbTa)C high-entropy ceramic under pressureless sintering 被引量:2
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作者 Wen Zhang Lei Chen +4 位作者 Chenguang Xu xuming lv Yujin Wang Jiahu Ouyang Yu Zhou 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2022年第15期57-64,共8页
The grain growth kinetics and densification mechanism of(TiZrHfVNbTa)C high-entropy carbide ceramic are investigated in this work.A single phase carbide with a rock-salt structure is formed until 2300°C,below whi... The grain growth kinetics and densification mechanism of(TiZrHfVNbTa)C high-entropy carbide ceramic are investigated in this work.A single phase carbide with a rock-salt structure is formed until 2300°C,below which an apparent aggregation of V,Zr and Hf exists.It is associated with the slow diffusion rate of V element as well as the relatively poor solubility of VC in HfC(as well as ZrC).The grain growth mechanism gradually changes from surface diffusion to volume diffusion and then grain boundary diffusion with increasing sintering temperature.This is attributed to the variation of activation energy of grain growth.The densification mechanism is principally dominated by the mass transport through lattice diffusion with the activation energy of 839±53 k J/mol.Through the design of two-step sintering,it is verified that the solid solution formation can effectively promote the densification process. 展开更多
关键词 High-entropy carbide ceramic Pressureless sintering Grain growth kinetics Densification mechanism
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