One-dimensional Ga N nanomaterials transformed from one-dimensional Ga_2O_3 and Ga nanomaterials

One-dimensional(1D) GaN nanomaterials exhibiting various morphologies and atomic structures were prepared via ammoniation of either Ga_2O_3 nanoribbons, Ga_2O_3 nanorods or Ga nanowires filled into carbon nanotubes(CNTs). The 1D GaN nanomaterials transformed from Ga_2O_3 nanoribbons consisted of numerous GaN nanoplatelets having the close-packed plane, i.e.(0002)2H or(111)3C parallel to the axes of starting nanoribbons. The 1D GaN nanomaterials converted from Ga_2O_3 nanorods were polycrystalline rods covered with GaN nanoparticles along the axes. The 1D GaN nanomaterials prepared from Ga nanowires filled into CNTs displayed two dominant morphologies:(i) single crystalline Ga N nanocolumns coated by CNTs, and(ii) pure single crystalline Ga N nanowires. The cross-sectional shape of Ga N nanowires were analyzed through the transmission electron microscopy(TEM) images. Formation mechanism of all-mentioned 1D GaN nanomaterials is then thoroughly discussed.

Dual effect of Cu on the Al3Sc nanoprecipitate coarsening

It is generally considered that the Al3Sc nanoprecipitates are highly thermal stable,mainly due to quite slow Sc diffusion in theα-Al matrix.In this paper,we demonstrate in an Al-Cu-Sc alloy that the Cu atoms have dual effect on the coarsening of Al3Sc nanoprecipitates.On the one hand,the Cu atoms with high diffusivity tend to accelerate the Al3Sc coarsening,which results from the Cu-promoted Sc diffusion.On the other hand,some Cu atoms will segregate at the Al3Sc/matrix interface,which further stabilizes the Al3Sc nanoprecipitates by reducing the interfacial energy.Competition between these two effects is tailored by temperature,which rationalizes the experimental findings that the coarsening kinetics of Al3Sc nanoprecipitate is greatly boosted at 300℃-overaging while significantly suppressed at 400℃-overaging.