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Zero-Point Motions in Trans-Polyacetylene
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作者 FU Rong-tang RAO Xue-song +1 位作者 SUN Xin y.kawazoe 《Chinese Physics Letters》 SCIE CAS CSCD 1998年第9期674-676,共3页
In order to substantiate the applicability of the Takayama-Lin-Liu-Maki model to conducting polymer,the Su-Schrieffer-Heeger model is generalized to include the effects of lattice zero-point motions on electronic prop... In order to substantiate the applicability of the Takayama-Lin-Liu-Maki model to conducting polymer,the Su-Schrieffer-Heeger model is generalized to include the effects of lattice zero-point motions on electronic properties.Beyond the treatment of the white-noise approximation,some significant electronic properties of Peierls-Fröhlich states are documented.The finding shows that the correlation of lattice motions suppresses the effects of zero-point motions on the electronic properties more seriously. 展开更多
关键词 PROPERTIES LATTICE ELECTRONIC
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Current-Voltage Characteristics of Molecular Devices at Low Bias
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作者 LIAOYun-Xing CHENHao +2 位作者 R.Note H.Mizuseki y.kawazoe 《Chinese Physics Letters》 SCIE CAS CSCD 2004年第7期1247-1250,共4页
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固态vander WaalsC _(60)膜晶格的Coulomb膨胀
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作者 薛其坤 厉建龙 +10 位作者 孙牧 陆华 T.Hashizume Y.Ling Y.Hasegawa K.Ohno Z.Q.Li y.kawazoe T.Sakurai H.Kamiyama H.Shinohara 《中国科学(A辑)》 CSCD 2000年第6期529-536,共8页
利用扫描隧道显微镜观测到生长在GaAs(0 0 1 ) 2× 4表面上的固态vanderWaalsC6 0 膜在室温下较之C6 0 晶体具有 1 3%的晶格膨胀 .这种膨胀是由从GaAs衬底饱和的As悬挂键上转移到C6 0 分子上的电荷之间的Coulomb作用引起的 .理论计... 利用扫描隧道显微镜观测到生长在GaAs(0 0 1 ) 2× 4表面上的固态vanderWaalsC6 0 膜在室温下较之C6 0 晶体具有 1 3%的晶格膨胀 .这种膨胀是由从GaAs衬底饱和的As悬挂键上转移到C6 0 分子上的电荷之间的Coulomb作用引起的 .理论计算表明 ,平均约有 1 76个电子转移到每个C6 0 分子上 .有趣的是 ,该固态C6 0 膜为 (1 1 0 )取向 ,这明显不同于生长于其他半导体或金属表面上的具有 (1 1 1 )取向的六角密排C6 0 膜 .这种反常取向的薄膜是由GaAs衬底的各向异性产生的一维限制作用导致的 .通过选择不同的衬底 ,可以控制C6 0 展开更多
关键词 晶体生长 分子束外延 碳60膜 晶格 Coulomb膨胀
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Coulomb expansion of a van der Waals C_(60) solid film
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作者 薛其坤 厉建龙 +8 位作者 孙牧 陆华 T.Hashizume Y.Hasegawa K.Ohno y.kawazoe T.Sakurai H.Kamiyama H.Shinohara 《Science China Mathematics》 SCIE 2000年第11期1224-1232,共9页
Scanning tunneling microscopy study revealed a van der Waals C60, solid film with 13% room-temperature lattice expansion on the GaAs(001) 2×4 surface. The mechanism involves fundamental Coulomb interaction due to... Scanning tunneling microscopy study revealed a van der Waals C60, solid film with 13% room-temperature lattice expansion on the GaAs(001) 2×4 surface. The mechanism involves fundamental Coulomb interaction due to charge transfer from the GaAs substrate. Theoretical calculation determines the charge transfer to be 1.76 electrons per C60 molecule. Oriented at its (110) crystallo-graphic axis this film also distinguishes itself from those formed on all other semiconductor and metal substrates where only the low-energy (111) hexagonal packing of C60 molecules was developed. It is shown that this is due to the one-dimensional confinement effect of the anisotropic substrate, which may have the prospect of controlling crystal growth. 展开更多
关键词 scanning tunneling microscopy C_(60) Coulomb interaction molecular beam epitaxy charge transfer.
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