The novel vertically standing Pt Se2 film on transparent quartz was prepared by selenization of platinum film deposited by the magnetron sputtering method, and an Nd:Lu VO4 passively mode-locked solid-state laser was ...The novel vertically standing Pt Se2 film on transparent quartz was prepared by selenization of platinum film deposited by the magnetron sputtering method, and an Nd:Lu VO4 passively mode-locked solid-state laser was realized by using the fabricated Pt Se2 film as a saturable absorber. The X-ray diffraction pattern and Raman spectrum of the film indicate its good crystallinity with a layered structure. The thickness of Pt Se2 film is measured to be 24 nm according to the cross-section height profile of the atomic force microscope image. Highresolution transmission electron microscopy images clearly demonstrate its vertically standing structure with an interlayer distance of 0.54 nm along the c-axis direction. The modulation depth(ΔT) and saturation fluence(Φs)of Pt Se2 film are measured to be 12.6% and 17.1 μJ∕cm2, respectively. The obtained mode-locked laser spectrum has a central wavelength of 1066.573 nm, with a 3 d B bandwidth of 0.106 nm. The transform limited pulse width of the mode-locked laser was calculated to be 15.8 ps. A maximum average output power of 180 m W with a working repetition rate of 61.3 MHz is obtained. To the best of our knowledge, this is the first report of the generation of ultrafast mode-locked laser pulses by using layered Pt Se2 as a saturable absorber.展开更多
基金National Natural Science Foundation of China(NSFC)(61705044)One-Hundred Young Talents Program of Guangdong University of Technology(GDUT)(220413145)+1 种基金Research Grants Council,University Grants Committee(RGC,UGC)(GRF 152109/16E Poly U B-Q52T)Hong Kong Polytechnic University(Poly U)(G-YBVG)
文摘The novel vertically standing Pt Se2 film on transparent quartz was prepared by selenization of platinum film deposited by the magnetron sputtering method, and an Nd:Lu VO4 passively mode-locked solid-state laser was realized by using the fabricated Pt Se2 film as a saturable absorber. The X-ray diffraction pattern and Raman spectrum of the film indicate its good crystallinity with a layered structure. The thickness of Pt Se2 film is measured to be 24 nm according to the cross-section height profile of the atomic force microscope image. Highresolution transmission electron microscopy images clearly demonstrate its vertically standing structure with an interlayer distance of 0.54 nm along the c-axis direction. The modulation depth(ΔT) and saturation fluence(Φs)of Pt Se2 film are measured to be 12.6% and 17.1 μJ∕cm2, respectively. The obtained mode-locked laser spectrum has a central wavelength of 1066.573 nm, with a 3 d B bandwidth of 0.106 nm. The transform limited pulse width of the mode-locked laser was calculated to be 15.8 ps. A maximum average output power of 180 m W with a working repetition rate of 61.3 MHz is obtained. To the best of our knowledge, this is the first report of the generation of ultrafast mode-locked laser pulses by using layered Pt Se2 as a saturable absorber.
