The introduction of strain In_(x)Ga_(1-x)As channel with high In content increases the confinement of the two-dimensional electron gas(2DEG)and further improves the high-frequency performance of InGaAs/InAlAs/InP HEMT...The introduction of strain In_(x)Ga_(1-x)As channel with high In content increases the confinement of the two-dimensional electron gas(2DEG)and further improves the high-frequency performance of InGaAs/InAlAs/InP HEMTs.The effect of In_(x)Ga_(1-x)As channel with different In contents on electron irradiation tolerance of InP-based HEMT structures in terms of 2DEG mobility and density has been investigated.The experiment results show that,after the same high electron irradiation dose,the 2DEG mobility and density in InP-based HEMT structures with strain In_(x)Ga_(1-x)As(x>0.53)channel decrease more dramatically than that without strain In_(0.53)Ga_(0.47)As channel.Moreover,the degradation of 2DEG mobility and density becomes more severe as the increase of In content and strain in the In_(x)Ga_(1-x)As channel.The research results can provide some suggestions for the design of radiation-resistant InP-based HEMTs.展开更多
Void-free β-SiC films were deposited on Si（001） substrates by laser chemical vapor deposition using hexamethyldisilane（HMDS） as the precursor. The effect of the time of introducing HMDS, i e, the substrate temper...Void-free β-SiC films were deposited on Si（001） substrates by laser chemical vapor deposition using hexamethyldisilane（HMDS） as the precursor. The effect of the time of introducing HMDS, i e, the substrate temperature when HMDS introduced（T_（in））, on the preferred orientation, surface microstructure and void was investigated. The orientation of the deposited SiC films changed from 〈001〉 to random to 〈111〉 with increasing T_（in）. The surface showed a layer-by-layer microstructure with voids above T_（in） ≥ 773 K, and then transformed into mosaic structure without voids at T_（in）= 298 K. The mechanism of the elimination of voids was discussed. At T_（in） =298 K, Si surface can be covered by an ultrathin SiC film, which inhibits the out-diffusion of Si atoms from substrate and prohibites the formation of the voids.展开更多
基金National Natural Science Foundation of China(11705277)Science and Technology Research Project of Hubei Provincial Department of Education(Q20222607)Graduate Quality Engineering Support Project of Hubei University of Arts and Science(YZ3202405)。
文摘The introduction of strain In_(x)Ga_(1-x)As channel with high In content increases the confinement of the two-dimensional electron gas(2DEG)and further improves the high-frequency performance of InGaAs/InAlAs/InP HEMTs.The effect of In_(x)Ga_(1-x)As channel with different In contents on electron irradiation tolerance of InP-based HEMT structures in terms of 2DEG mobility and density has been investigated.The experiment results show that,after the same high electron irradiation dose,the 2DEG mobility and density in InP-based HEMT structures with strain In_(x)Ga_(1-x)As(x>0.53)channel decrease more dramatically than that without strain In_(0.53)Ga_(0.47)As channel.Moreover,the degradation of 2DEG mobility and density becomes more severe as the increase of In content and strain in the In_(x)Ga_(1-x)As channel.The research results can provide some suggestions for the design of radiation-resistant InP-based HEMTs.
基金Funded by the National Natural Science Foundation of China(Nos.51372188 and 51521001)the 111 Project(B13035)+3 种基金the International Science&Technology Cooperation Program of China(2014DFA53090)the Natural Science Foundation of Hubei Province,China(2016CFA006)the National Key Research and Development Program of China(2017YFB0310400)the Fundamental Research Funds for the Central Universities(WUT:2017II43GX,2017III032)
文摘Void-free β-SiC films were deposited on Si（001） substrates by laser chemical vapor deposition using hexamethyldisilane（HMDS） as the precursor. The effect of the time of introducing HMDS, i e, the substrate temperature when HMDS introduced（T_（in））, on the preferred orientation, surface microstructure and void was investigated. The orientation of the deposited SiC films changed from 〈001〉 to random to 〈111〉 with increasing T_（in）. The surface showed a layer-by-layer microstructure with voids above T_（in） ≥ 773 K, and then transformed into mosaic structure without voids at T_（in）= 298 K. The mechanism of the elimination of voids was discussed. At T_（in） =298 K, Si surface can be covered by an ultrathin SiC film, which inhibits the out-diffusion of Si atoms from substrate and prohibites the formation of the voids.
