The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunne...The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunneling oxide Tox = 2 nm and the dimensions of Si- and Ge-nanocrystal Dsi = DGe = 5 nm, the retention time of this device can reach ten years(～1 × 108 s) while the programming and erasing time achieve the orders of microsecond and millisecond at the control gate voltage | Vg | = 3 V with respect to N-wells,respectively. Therefore, this novel device, as an excellent nonvolatile memory operating at room temperature,is desired to obtain application in future VLSI.展开更多
文摘The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunneling oxide Tox = 2 nm and the dimensions of Si- and Ge-nanocrystal Dsi = DGe = 5 nm, the retention time of this device can reach ten years(～1 × 108 s) while the programming and erasing time achieve the orders of microsecond and millisecond at the control gate voltage | Vg | = 3 V with respect to N-wells,respectively. Therefore, this novel device, as an excellent nonvolatile memory operating at room temperature,is desired to obtain application in future VLSI.
