An organic electroluminescent (EL) device has been constructed with a double quantum-well structure consisting of N, N'-bis-(1-naphthl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB) doped with 5,6,11,...An organic electroluminescent (EL) device has been constructed with a double quantum-well structure consisting of N, N'-bis-(1-naphthl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB) doped with 5,6,11,12-tetraphenylnaphthacene (rubrene) as a potential well and emitter, and undoped NPB as a barrier potential. The maximum ELefficiency and brightness reach 5.6cd/A and 40000cd/m^(2), respectively. Most importantly, with the increase of the drive voltage, the EL efficiency (cd/A) declines very slowly after reaching its maximum, almost independent of the drive voltage in a wide range from 5 to 13 V. This characteristic may be useful in the improvement of the lifetime of the device.展开更多
Yellow-light-emitting organic electroluminescent device with multilayer thin-film structure,which shows high brightness and efficiency,is constructed.The hole-transport layer is an N,N'-bis(3-methyphenyl)-N,N'...Yellow-light-emitting organic electroluminescent device with multilayer thin-film structure,which shows high brightness and efficiency,is constructed.The hole-transport layer is an N,N'-bis(3-methyphenyl)-N,N'-diphenylbe-nzidine film.The electron-transport layer is an 8-(quinolinolate)-aluminum(A1q)film.The luminescent layer consists of a host material Alq and an emitting dopant 5,6,11,12-petraphenyInaphthacene.The doped device exhibited the maximum emission 40000cd/m^(2) at 19V,and the maximum efficiency of 3.141m/W,which have been improved by about six and three times,respectively,in comparison with that in undoped device.For the unpackaged device,a luminance half-life on the order of about 230 h has been achieved with a constant current density of 15mA/cm^(2),starting at 500cd/m^(2) at the room temperature under ambient atmosphere.展开更多
A doping technique to fabricate an organic quantum-well electroluminescent device is demonstrated.The fabricated single-quantum-well device consists of the following structure:an N,N’-Bis(3-methyphenyl)-N,N’-dipheny...A doping technique to fabricate an organic quantum-well electroluminescent device is demonstrated.The fabricated single-quantum-well device consists of the following structure:an N,N’-Bis(3-methyphenyl)-N,N’-diphenyl benzidine layer for hole transportation,an 8-(quino1inoJate)-aluminum(AJq)layer for electron transportation and a light emitting layer of Alq doped with 5,6,11,12-tetraphenylnaphthacene(rubrene).The dopant rubrene serves as a potential well,whereas the undoped Alq layer serves as a barrier layer.The efficiency and luminance of the device have been significantly improved.The observed phenomena of the spectral narrowing and the emission peak energy blue-shift are a result of the recombination of carriers from the quantized energy states.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos.59973007 and 60077014。
文摘An organic electroluminescent (EL) device has been constructed with a double quantum-well structure consisting of N, N'-bis-(1-naphthl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB) doped with 5,6,11,12-tetraphenylnaphthacene (rubrene) as a potential well and emitter, and undoped NPB as a barrier potential. The maximum ELefficiency and brightness reach 5.6cd/A and 40000cd/m^(2), respectively. Most importantly, with the increase of the drive voltage, the EL efficiency (cd/A) declines very slowly after reaching its maximum, almost independent of the drive voltage in a wide range from 5 to 13 V. This characteristic may be useful in the improvement of the lifetime of the device.
基金Supported by the National Natural Science Foundation of China under Grant No.69637010the National“863”Project of China under Grant No.863-307-12-04(02).
文摘Yellow-light-emitting organic electroluminescent device with multilayer thin-film structure,which shows high brightness and efficiency,is constructed.The hole-transport layer is an N,N'-bis(3-methyphenyl)-N,N'-diphenylbe-nzidine film.The electron-transport layer is an 8-(quinolinolate)-aluminum(A1q)film.The luminescent layer consists of a host material Alq and an emitting dopant 5,6,11,12-petraphenyInaphthacene.The doped device exhibited the maximum emission 40000cd/m^(2) at 19V,and the maximum efficiency of 3.141m/W,which have been improved by about six and three times,respectively,in comparison with that in undoped device.For the unpackaged device,a luminance half-life on the order of about 230 h has been achieved with a constant current density of 15mA/cm^(2),starting at 500cd/m^(2) at the room temperature under ambient atmosphere.
基金the National Natural Science Foundation of China under Grant No.69637010National High Technology Project of China[No:863-307-12-04(02)].
文摘A doping technique to fabricate an organic quantum-well electroluminescent device is demonstrated.The fabricated single-quantum-well device consists of the following structure:an N,N’-Bis(3-methyphenyl)-N,N’-diphenyl benzidine layer for hole transportation,an 8-(quino1inoJate)-aluminum(AJq)layer for electron transportation and a light emitting layer of Alq doped with 5,6,11,12-tetraphenylnaphthacene(rubrene).The dopant rubrene serves as a potential well,whereas the undoped Alq layer serves as a barrier layer.The efficiency and luminance of the device have been significantly improved.The observed phenomena of the spectral narrowing and the emission peak energy blue-shift are a result of the recombination of carriers from the quantized energy states.
