Hole carrier mediated magnetization in Cu-doped GaN is investigated by using the first-principles calculations. By studying the sp-d interaction and the direct exchange interaction among the dopants, we obtain an equa...Hole carrier mediated magnetization in Cu-doped GaN is investigated by using the first-principles calculations. By studying the sp-d interaction and the direct exchange interaction among the dopants, we obtain an equation to determine the spontaneous magnetization as a function of the Cu dopant concentration and the hole carrier density. It is demonstrated that nonmagnetic Cu doped GaN can be of room-temperature ferromagnetism. The system＇s Curie temperature Tc can reach about 345 K with Cu concentration of 1.0% and hole carrier density of 5.0×10^19 cm-3. The results are in good agreement with experimental observations and indicate that ferromagnetism in this systems is tunable by controlling the Cu concentration and the hole carrier density.展开更多
基金Supported by the National Basic Research Program of China (973 Program) (2007CB924902)the National Natural Science Foundation of China (10775053, 61076089)the "Shu Guang" Project of Shanghai Education Development Foundation (09SG24)
文摘Hole carrier mediated magnetization in Cu-doped GaN is investigated by using the first-principles calculations. By studying the sp-d interaction and the direct exchange interaction among the dopants, we obtain an equation to determine the spontaneous magnetization as a function of the Cu dopant concentration and the hole carrier density. It is demonstrated that nonmagnetic Cu doped GaN can be of room-temperature ferromagnetism. The system＇s Curie temperature Tc can reach about 345 K with Cu concentration of 1.0% and hole carrier density of 5.0×10^19 cm-3. The results are in good agreement with experimental observations and indicate that ferromagnetism in this systems is tunable by controlling the Cu concentration and the hole carrier density.
