This paper presents experimental results of transient gamma irradiation effects on two kinds of circuits.One is a two-stage circuit consisting of a bipolar power device L7805CV and a bulk complementary metal-oxide-sem...This paper presents experimental results of transient gamma irradiation effects on two kinds of circuits.One is a two-stage circuit consisting of a bipolar power device L7805CV and a bulk complementary metal-oxide-semiconductor(CMOS) device IDT6116,the other is a two-stage circuit consisting of a bipolar power device L7805CV and the equivalent circuit of the parasitic P-N-P-N structure in bulk CMOS devices.The results show that the L7805CV's output interruption after transient irradiation can prevent latch-up from occurring on the second stage circuit.The demanded minimum interruption duration to avoid latch-up varies with dose rate,and this is confirmed by the experimental results.展开更多
Groups of a typical operational amplifier–μA741 were irradiated in a cobalt unit,each group accumulating a different total ionizing dose(TID).The results showed that the TID caused power consumption current and slew...Groups of a typical operational amplifier–μA741 were irradiated in a cobalt unit,each group accumulating a different total ionizing dose(TID).The results showed that the TID caused power consumption current and slew rate(SR)to degenerate in ultra-linearity,owing to a severe reduction in the current gain of the internal LPNP transistors.Pulsed X-ray irradiation experiments were carried out on theμA741 groups with different values,and the results revealed that the impact on the response to the pulsed X-ray irradiation was greater when the devices absorbed more TID.The mechanism for this is explained on the basis of the circuit construction of theμA741;the sensitive parameters of the circuit were obtained via simulation on SPICE.The simulation results additionally showed that if the sensitive parameters were optimized,the duration of interruption caused by the pulsed X-ray irradiation would be reduced significantly.In addition,several proposals are provided for hardening the devices.展开更多
In the context of multivariate regular variation,the authors establish the first-order asymptotics of the spectral risk measure of portfolio loss.Furthermore,by the notion of second-order regular variation,the second-...In the context of multivariate regular variation,the authors establish the first-order asymptotics of the spectral risk measure of portfolio loss.Furthermore,by the notion of second-order regular variation,the second-order asymptotics of the spectral risk measure of portfolio loss is also presented.In order to illustrate the derived results,a numerical example with Monte Carlo simulation is carried out.展开更多
In this paper,an exponential inequality for weighted sums of identically distributed NOD （negatively orthant dependent） random variables is established,by which we obtain the almost sure convergence rate of which re...In this paper,an exponential inequality for weighted sums of identically distributed NOD （negatively orthant dependent） random variables is established,by which we obtain the almost sure convergence rate of which reaches the available one for independent random variables in terms of Berstein type inequality. As application,we obtain the relevant exponential inequality for Priestley-Chao estimator of nonparametric regression estimate under NOD samples,from which the strong consistency rate is also obtained.展开更多
基金supported by the Guangxi Natural Science Foundation(Grant No.2022GXNSFAA035516)the National Natural Science Foundation of China(Grant No.11461009)the Important Natural Science Foun-dation of Colleges and Universities of Anhui Province(Grant No.KJ2020A0122).
文摘This paper presents experimental results of transient gamma irradiation effects on two kinds of circuits.One is a two-stage circuit consisting of a bipolar power device L7805CV and a bulk complementary metal-oxide-semiconductor(CMOS) device IDT6116,the other is a two-stage circuit consisting of a bipolar power device L7805CV and the equivalent circuit of the parasitic P-N-P-N structure in bulk CMOS devices.The results show that the L7805CV's output interruption after transient irradiation can prevent latch-up from occurring on the second stage circuit.The demanded minimum interruption duration to avoid latch-up varies with dose rate,and this is confirmed by the experimental results.
基金supported by the State Key Laboratory Foundation(Grant No.SKLIPR1212)
文摘Groups of a typical operational amplifier–μA741 were irradiated in a cobalt unit,each group accumulating a different total ionizing dose(TID).The results showed that the TID caused power consumption current and slew rate(SR)to degenerate in ultra-linearity,owing to a severe reduction in the current gain of the internal LPNP transistors.Pulsed X-ray irradiation experiments were carried out on theμA741 groups with different values,and the results revealed that the impact on the response to the pulsed X-ray irradiation was greater when the devices absorbed more TID.The mechanism for this is explained on the basis of the circuit construction of theμA741;the sensitive parameters of the circuit were obtained via simulation on SPICE.The simulation results additionally showed that if the sensitive parameters were optimized,the duration of interruption caused by the pulsed X-ray irradiation would be reduced significantly.In addition,several proposals are provided for hardening the devices.
基金supported by the Important Natural Science Foundation of Colleges and Universities of Anhui Province under Grant No.KJ2020A0122the Scientific Research Start-up Foundation of Hefei Normal University。
文摘In the context of multivariate regular variation,the authors establish the first-order asymptotics of the spectral risk measure of portfolio loss.Furthermore,by the notion of second-order regular variation,the second-order asymptotics of the spectral risk measure of portfolio loss is also presented.In order to illustrate the derived results,a numerical example with Monte Carlo simulation is carried out.
基金Supported by the National Natural Science Foundation of China ( 11061007)
文摘In this paper,an exponential inequality for weighted sums of identically distributed NOD （negatively orthant dependent） random variables is established,by which we obtain the almost sure convergence rate of which reaches the available one for independent random variables in terms of Berstein type inequality. As application,we obtain the relevant exponential inequality for Priestley-Chao estimator of nonparametric regression estimate under NOD samples,from which the strong consistency rate is also obtained.
