A series of (Ni50Fe50)x(SiO2)(1-x) films with different volume fraction x was fabricated by magnetron co-sputtering technique. The microstructure, magnetic and electrical properties were investigated systematically by...A series of (Ni50Fe50)x(SiO2)(1-x) films with different volume fraction x was fabricated by magnetron co-sputtering technique. The microstructure, magnetic and electrical properties were investigated systematically by using X-ray diffraction, transmission electronic microscope, vibrating sample magnetometer and the traditional four point measurement method of resistivity. The results show that the samples consist of nano-scaled Ni50Fe50 metallic particles with fcc structure uniformly embedded in amorphous insulating SiO2 matrix, and the particle size decreases with the decrease of x. The rapid change of coercivity with x is observed, and a minimum value 160 A·m-1 of Hc was obtained for the sample of x=0.83 with film thickness of 180 nm, which can be contributed to the exchange coupling between nano-scaled Ni50Fe50 particles. At the frequency lower than 1 GHz, the real part μ′ of complex permeability keeps about 110 and the image part μ″ is less than 15. Besides, this film exhibits high resistivity ρ=263 μΩ·cm, high saturation magnetization 4πMs=1.25 T, high in-plane magnetic anisotropy field Hk=6.37 kA·m-1, and the ferromagnetic resonance (FMR) frequency is estimated to be 2.8 GHz. Therefore, this film can be used in high frequency devices operating over 2 GHz.展开更多
文摘A series of (Ni50Fe50)x(SiO2)(1-x) films with different volume fraction x was fabricated by magnetron co-sputtering technique. The microstructure, magnetic and electrical properties were investigated systematically by using X-ray diffraction, transmission electronic microscope, vibrating sample magnetometer and the traditional four point measurement method of resistivity. The results show that the samples consist of nano-scaled Ni50Fe50 metallic particles with fcc structure uniformly embedded in amorphous insulating SiO2 matrix, and the particle size decreases with the decrease of x. The rapid change of coercivity with x is observed, and a minimum value 160 A·m-1 of Hc was obtained for the sample of x=0.83 with film thickness of 180 nm, which can be contributed to the exchange coupling between nano-scaled Ni50Fe50 particles. At the frequency lower than 1 GHz, the real part μ′ of complex permeability keeps about 110 and the image part μ″ is less than 15. Besides, this film exhibits high resistivity ρ=263 μΩ·cm, high saturation magnetization 4πMs=1.25 T, high in-plane magnetic anisotropy field Hk=6.37 kA·m-1, and the ferromagnetic resonance (FMR) frequency is estimated to be 2.8 GHz. Therefore, this film can be used in high frequency devices operating over 2 GHz.
