基于统计过程控制的硅转接板良率优化系统设计

针对2.5D封装用硅通孔(through silicon via,TSV)硅转接基板批量化生产过程中缺乏可靠性评价与优化技术的问题,提出基于统计过程控制(statistical process control,SPC)的评估控制系统,实现在线工艺状态监控及评价,设计硅转接板测试用工艺控制检测(process control monitor,PCM)结构,阐述自动光学检测(automated optical inspection,AOI)中常见的缺陷对系统可靠性的影响。提出的SPC系统对硅转接板批量化生产良率提升具有重要意义。

Effect and mechanism of on-chip electrostatic discharge protection circuit under fast rising time electromagnetic pulse

The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with the CMOS circuit,but also acts on the protection circuit.This paper establishes a model of on-chip CMOS electrostatic discharge protection circuit and selects square pulse as the FREMP signals.Based on multiple physical parameter models,it depicts the distribution of the lattice temperature,current density,and electric field intensity inside the device.At the same time,this paper explores the changes of the internal devices in the circuit under the injection of fast rising time electromagnetic pulse and describes the relationship between the damage amplitude threshold and the pulse width.The results show that the ESD protection circuit has potential damage risk,and the injection of FREMP leads to irreversible heat loss inside the circuit.In addition,pulse signals with different attributes will change the damage threshold of the circuit.These results provide an important reference for further evaluation of the influence of electromagnetic environment on the chip,which is helpful to carry out the reliability enhancement research of ESD protection circuit.

基于神经网络的硅通孔电热瞬态优化方法

针对三维集成微系统中高密度集成导致的热效应和复杂的多物理场耦合问题,提出了一种基于神经网络辅助人工蜂群的硅通孔电热瞬态优化方法,用于高效准确地分析三维微系统中硅通孔阵列的瞬态电热问题.利用有限元分析软件进行了电热耦合协同仿真,分析了设计参数(硅通孔半径、氧化物厚度、硅通孔间距)对硅通孔阵列中铜柱温度、微凸点温度等性能的影响.利用神经网络建立了设计参数与性能参数之间的映射关系.提出了一种具有性能约束的协同优化策略,并采用蜂群优化算法对设计参数进行优化.根据优化后的设计参数,有限元模拟结果与预测性能基本一致,结构的最高温度误差为2.6%.结论不仅证明了优化策略的可行性,且与传统有限元方法相比,该优化设计方法极大地缩短了仿真时间,简化了多场耦合中复杂数学分析.

First-principles Theoretical Study on Band of Strained Wurtzite Nb-doped ZnO

The strain effects of the Zn1-xMgxO substrate on the bands structure of wurtzite Nb-doped Zn O bulk materials have been investigated using fi rst-principles calculations based on density functional theory. Firstly, the band gap increases gradually with increasing Nb contents in unstrained Nb-doped Zn O, which is consistent with the experimental results. Secondly, the band gap decreases with increasing substrate stress in Nb-doped Zn O/Zn1-xMgxO. Splitting energies between HHB（Heavy Hole Band） and LHB（Light Hole Band）, HHB and CSB（Crystal Splitting Band） in Zn0.9167Nb0.0833O/Zn1-xMgxO almost remain unchanged with increasing substrate stress, while decrease slightly in Zn0.875Nb0.125O/Zn1-xMgxO. In addition, detailed analysis of the strain effects on the effective masses of electron and hole in Nb-doped Zn O/Zn1-xMgxO is also given.

Mechanical-electrical synergy damage effect on GaN HEMT under high-power microwave

High-power microwave damage to enhanced-mode Ga N high electron mobility transistors(HEMT)is studied considering the mechanical-electrical synergy effect due to the strong piezoelectric properties of Ga N,which has a wurtzite crystal structure.Based on the piezoelectric constitutive equation,the mechanical and electrical energies were equivalently coupled,and the effective numerical model was built in the simulation software.The results indicated that a part of the electrical energy was stored in the device as a form of elastic energy,causing the burnout time of Ga N HEMT to be extended.The effects of different injection voltages and frequencies were analyzed,and the results revealed that elastic energy plays a different role during the process of device damage.These results are of great significance for the design of Ga N HEMTs with better reliability in harsh electromagnetic environments and for improving their protection design.

Strain effects on valence bands of wurtzite ZnO

Based on the k.p theory of Luttinger-Kohn and Bir-Pikus,analytical E-k solutions for the valence band of strained wurtzite ZnO materials are obtained.Strain effects on valence band edges and hole effective masses in strained wurtzite ZnO materials are also discussed.In comparison with unstrained ZnO materials,apparent movement of valence band edges such as "light hole band","heavy hole band" and "crystal splitting band" at Γ point is found in strained wurtzite ZnO materials.Moreover,effective masses of "light hole band","heavy hole band" and "crystal splitting band" for strained wurtzite ZnO materials as the function of stress are given.The analytical results can provide a theoretical foundation for the understanding of physics of strained ZnO materials and its applications with the framework for an effective mass theory.

Analysis of temperature-dependent characteristics of a 4H-SiC metal-semiconductor-metal ultraviolet photodetector

We investigate the temperature dependence of current-voltage and spectral response characteristics of a 4H-SiC metal-semicon-ductor-metal (MSM) ultraviolet photodetector in the temperature range from room temperature to 800 K with two-dimensional (2D) numerical simulator ISE-DESSIS. It is found that the dark current and photocurrent increase with the increasing temperature. For the range of 500-800 K, the dark current increases by nearly a factor 3.5 every 150 K larger than that of photocurrent, leading to a negative effect on photodetector current ratio (PDCR). Nevertheless, the PDCR is still greater than 200 even at 800 K, which exhibits the excellent thermal stability. In addition, the responsivity has an unsymmetrical trend. As temperature rises, it is clear that a remarkable red-shift of 12 nm occurs and overall responsivity is enhanced for longer wavelength. While the short-wave-length response remains relatively independent of temperature. The mechanism of indirect and direct band absorption transition is responsible for temperature-dependent spectrum distribution. These findings provide a significant insight on the design of the MSM detector operated at elevated temperature.

An offset cancellation technique in a switched-capacitor comparator for SAR ADCs

An offset cancellation technique for a SAR （successive approximation register） ADC switched-capacitor comparator is described. The comparator is designed with a pre-amplifying and regenerative latching structure and realized in 0.18μm CMOS. With the first stage preamplifier offset cancellation and low offset regenerative latching approach, the equivalent offset of the comparator is reduced to 〈 0.55 mV. By using the pre-amplifying and regenerative latching comparison mode the comparator exhibits low power dissipation. Under a 1.8 V power supply, with a 200 kS/s ADC sampling rate and 3 MHz clock frequency, a 13-bit comparison resolution is reached and less than 0.09 mW power dissipation is consumed. The superiority of this comparator is discussed and proved by the post-simulation and application to a 10 bit 200 kS/s touch screen SAR A/D converter.

SHA-less architecture with enhanced accuracy for pipelined ADC

A new design technique for merging the front-end sample-and-hold amplifier（SHA） into the first multiplying digital-to-analog converter（MDAC） is presented.For reducing the aperture error in the first stage of the pipelined ADC,a symmetrical structure is used in a flash ADC and MDAC.Furthermore,a variable resistor tuning network is placed at the flash input to compensate for different cutoff frequencies of the input impedances of the flash and MDAC.The circuit also has a clear clock phase in the MDAC and separate sampling capacitors in the flash ADC to eliminate the nonlinear charge kickback to the input signal.The proposed circuit,designed using ASMC 0.35-μm BiCMOS technology,occupies an area of 1.4 x 9 mm^2 and is used as the front-end stage in a 14-bit 125-MS/s pipelined ADC.After the trim circuit is enabled,the measured signal-to-noise ratio is improved from 71.5 to 73.6 dB and the spurious free dynamic range is improved from 80.5 to 83.1 dB with a 30.8 MHz input. The maximum input frequency is up to 150 MHz without steep performance degradations.