The domain reversal characteristics of near-stoichiometric LiNbO3 ([Li]/[Li+Nb]=0.496) single crystals, which are grown by the Czochralski method with K2O tlux, are investigated. The switch tield for 180° ferroel...The domain reversal characteristics of near-stoichiometric LiNbO3 ([Li]/[Li+Nb]=0.496) single crystals, which are grown by the Czochralski method with K2O tlux, are investigated. The switch tield for 180° ferroelectric domain reversal in the near-stoichiometric LiNbO3 crystal is 8.0±0.5kV/mm, which is only one third of the switching field required for the congruent LiNbO3 crystals. We have successfully achieved 180° domain reversal in near-stoichiometric LiNbO3 samples of 1.0mm thickness.展开更多
To implement high quality tunneling injection quantum dot lasers, effects of primary factors on performance of the tunneling injection quantum dot lasers were investigated. The considered factors were tunneling probab...To implement high quality tunneling injection quantum dot lasers, effects of primary factors on performance of the tunneling injection quantum dot lasers were investigated. The considered factors were tunneling probability, tun- neling time and carriers thermal escape time from the quantum well. The calculation results show that with increas- ing of the ground-state energy level in quantum well, the tunneling probability increases and the tunneling time decreases, while the thermal escape time decreases because the ground-state energy level is shallower. Longitudinal optical phonon-assisted tunneling can be an effective method to solve the problem that both the tunneling time and the thermal escape time decrease simultaneously with the ground-state energy level increasing in quantum well.展开更多
基金Supported by the National Advanced Material Committee(grant 863-715-001-0102)and special funding for the excellent young researchers from the National Natural Science Foundation of China under Grant No.69825108and National Education Ministry of China,“973”Project(grant 1999033004).
文摘The domain reversal characteristics of near-stoichiometric LiNbO3 ([Li]/[Li+Nb]=0.496) single crystals, which are grown by the Czochralski method with K2O tlux, are investigated. The switch tield for 180° ferroelectric domain reversal in the near-stoichiometric LiNbO3 crystal is 8.0±0.5kV/mm, which is only one third of the switching field required for the congruent LiNbO3 crystals. We have successfully achieved 180° domain reversal in near-stoichiometric LiNbO3 samples of 1.0mm thickness.
基金the National Natural Science Foundationof China (Grant No. 60476042) and Tianjin City Research Founda-tion for Key Basic Research, China (Grant No. 06YFJZJC01100)
文摘To implement high quality tunneling injection quantum dot lasers, effects of primary factors on performance of the tunneling injection quantum dot lasers were investigated. The considered factors were tunneling probability, tun- neling time and carriers thermal escape time from the quantum well. The calculation results show that with increas- ing of the ground-state energy level in quantum well, the tunneling probability increases and the tunneling time decreases, while the thermal escape time decreases because the ground-state energy level is shallower. Longitudinal optical phonon-assisted tunneling can be an effective method to solve the problem that both the tunneling time and the thermal escape time decrease simultaneously with the ground-state energy level increasing in quantum well.
