Al Ga N/Ga N高电子迁移率晶体管的栅极电容由本征电容和边缘电容组成.边缘电容分为外部边缘电容和内部边缘电容,内部边缘电容相比外部边缘电容对器件的开关转换特性更为敏感.本文基于内部边缘电容的形成机理,推导了内部边缘电容C_(ifs...Al Ga N/Ga N高电子迁移率晶体管的栅极电容由本征电容和边缘电容组成.边缘电容分为外部边缘电容和内部边缘电容,内部边缘电容相比外部边缘电容对器件的开关转换特性更为敏感.本文基于内部边缘电容的形成机理,推导了内部边缘电容C_(ifs/d)模型,进一步的分析表明,其与器件的栅极偏置强相关;基于WardDutton电荷分配原则推导了相应的本征电容模型,最后结合外部边缘电容得到了完整的栅极电容模型.由于边缘电容是由器件结构产生的寄生电容,仿真结果表明,若不考虑边缘电容的影响,栅源电容的误差可达80%以上,而栅漏电容的误差可达65%以上.因此,在高频开关应用领域,边缘电容对栅极电容的影响不可忽略.展开更多
Based on the differential Ohm's law and Poisson's equation,an analytical model of the drain current for a-Si:H thin-film transistors is developed.This model is proposed to elaborate the temperature effect on t...Based on the differential Ohm's law and Poisson's equation,an analytical model of the drain current for a-Si:H thin-film transistors is developed.This model is proposed to elaborate the temperature effect on the drain current,which indicates that the drain current is linear with temperature in the range of 290–360 K,and the results fit well with the experimental data.展开更多
A prototype ZnO:Al/amorphous-FeSi2 heterojunction was successfully prepared on a glass substrate by magnetron sputtering at room temperature.The structural and electrical properties of as−deposited FeSi2 thin films we...A prototype ZnO:Al/amorphous-FeSi2 heterojunction was successfully prepared on a glass substrate by magnetron sputtering at room temperature.The structural and electrical properties of as−deposited FeSi2 thin films were investigated using x−ray diffraction,Raman scattering,resistivity,and carrier lifetime measurement.The FeSi2 thin film showed an amorphous phase with resistivity of 9.685Ω⋅cm and carrier lifetime of 9.5µs.The prototype ZnO:Al/amorphous−FeSi2 heterojunction exhibited a rectifying property of the diode from the dark current−voltage characteristic.This propert was evaluated using the shunt resistance and diode ideal factor.The experimental results suggest that the amorphous-FeSi2 thin film has promising applications in heterojunction devices with low thermal budget and low product cost.展开更多
Nano-crystalline silicon(nc-Si)films embedded in SiO2 exhibited strong visible light luminescence at room temperature.The energies of photoluminescence peak were found to be more than 1.9eV and the peaks shifted to hi...Nano-crystalline silicon(nc-Si)films embedded in SiO2 exhibited strong visible light luminescence at room temperature.The energies of photoluminescence peak were found to be more than 1.9eV and the peaks shifted to higher energies when nano-Si films were post-oxidized.The photoluminescence intensity depended significantly on the size of the grains and the characteristics of the oxidized surface.Microcrystalline silicon grains of 2-3nm average size and radiation recombination centers located on the nanoscale silicon grain surfaces and located in the Si oxide layers are considered to be the source of the visible luminescence.展开更多
文摘Al Ga N/Ga N高电子迁移率晶体管的栅极电容由本征电容和边缘电容组成.边缘电容分为外部边缘电容和内部边缘电容,内部边缘电容相比外部边缘电容对器件的开关转换特性更为敏感.本文基于内部边缘电容的形成机理,推导了内部边缘电容C_(ifs/d)模型,进一步的分析表明,其与器件的栅极偏置强相关;基于WardDutton电荷分配原则推导了相应的本征电容模型,最后结合外部边缘电容得到了完整的栅极电容模型.由于边缘电容是由器件结构产生的寄生电容,仿真结果表明,若不考虑边缘电容的影响,栅源电容的误差可达80%以上,而栅漏电容的误差可达65%以上.因此,在高频开关应用领域,边缘电容对栅极电容的影响不可忽略.
文摘Based on the differential Ohm's law and Poisson's equation,an analytical model of the drain current for a-Si:H thin-film transistors is developed.This model is proposed to elaborate the temperature effect on the drain current,which indicates that the drain current is linear with temperature in the range of 290–360 K,and the results fit well with the experimental data.
文摘A prototype ZnO:Al/amorphous-FeSi2 heterojunction was successfully prepared on a glass substrate by magnetron sputtering at room temperature.The structural and electrical properties of as−deposited FeSi2 thin films were investigated using x−ray diffraction,Raman scattering,resistivity,and carrier lifetime measurement.The FeSi2 thin film showed an amorphous phase with resistivity of 9.685Ω⋅cm and carrier lifetime of 9.5µs.The prototype ZnO:Al/amorphous−FeSi2 heterojunction exhibited a rectifying property of the diode from the dark current−voltage characteristic.This propert was evaluated using the shunt resistance and diode ideal factor.The experimental results suggest that the amorphous-FeSi2 thin film has promising applications in heterojunction devices with low thermal budget and low product cost.
基金the National Natural Science Foundation of China under Grant No.19475027Natural Science Foundation of China under Grant No.950822.
文摘Nano-crystalline silicon(nc-Si)films embedded in SiO2 exhibited strong visible light luminescence at room temperature.The energies of photoluminescence peak were found to be more than 1.9eV and the peaks shifted to higher energies when nano-Si films were post-oxidized.The photoluminescence intensity depended significantly on the size of the grains and the characteristics of the oxidized surface.Microcrystalline silicon grains of 2-3nm average size and radiation recombination centers located on the nanoscale silicon grain surfaces and located in the Si oxide layers are considered to be the source of the visible luminescence.
