The growth striation,the resistant homogeneity,and the oxygen concentration of silicon single crystal grown by both Transverse Magnetic Czochralski(MCZ)and Czochralski growth methods(CZ)were investigated.The oxygen co...The growth striation,the resistant homogeneity,and the oxygen concentration of silicon single crystal grown by both Transverse Magnetic Czochralski(MCZ)and Czochralski growth methods(CZ)were investigated.The oxygen concentration in MCZ silicon is more uniform and controllable.It is concluded that the Magnetic Czochralski method is an effective method to improve the quality of silicon single crystal.展开更多
The applications of double-gettering technique(DGT)for silicon single crystal indicate its strong gettering effectiveness.By using E-center model,the minimum concentration of phosphorus,gettering process and the conti...The applications of double-gettering technique(DGT)for silicon single crystal indicate its strong gettering effectiveness.By using E-center model,the minimum concentration of phosphorus,gettering process and the continuous gettering ability were investigated.It was pointed out that the gettering functions of phosphorus and dislocation loops result in extremely strong gettering effectiveness of DGT.展开更多
Investigations on the nature and states of the defeats in single crystal wafers treated with double-gettering technique have been carried out by means of optical microscopy,electron microscopy,electron miaroanalysis a...Investigations on the nature and states of the defeats in single crystal wafers treated with double-gettering technique have been carried out by means of optical microscopy,electron microscopy,electron miaroanalysis and spread resistance.Phosphorus profile in these wafers was measured.And the effect of phosphorus on defects and resistivity was determined.展开更多
基金Project supported by the Natural Science Foundation of China。
文摘The growth striation,the resistant homogeneity,and the oxygen concentration of silicon single crystal grown by both Transverse Magnetic Czochralski(MCZ)and Czochralski growth methods(CZ)were investigated.The oxygen concentration in MCZ silicon is more uniform and controllable.It is concluded that the Magnetic Czochralski method is an effective method to improve the quality of silicon single crystal.
基金supported by the Science Fund of Chinese Academy of Sciences。
文摘The applications of double-gettering technique(DGT)for silicon single crystal indicate its strong gettering effectiveness.By using E-center model,the minimum concentration of phosphorus,gettering process and the continuous gettering ability were investigated.It was pointed out that the gettering functions of phosphorus and dislocation loops result in extremely strong gettering effectiveness of DGT.
文摘Investigations on the nature and states of the defeats in single crystal wafers treated with double-gettering technique have been carried out by means of optical microscopy,electron microscopy,electron miaroanalysis and spread resistance.Phosphorus profile in these wafers was measured.And the effect of phosphorus on defects and resistivity was determined.
