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THE STUDY ON GETTERING MECHANISM OF DOUBLE-GETTERING TECHNIQUE
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作者 MAI Zhenhong DAI Daoyang +2 位作者 ZHOU Shiren ye yizheng ye Shuichi 《Chinese Physics Letters》 SCIE CAS 1987年第7期293-296,共4页
The applications of double-gettering technique(DGT)for silicon single crystal indicate its strong gettering effectiveness.By using E-center model,the minimum concentration of phosphorus,gettering process and the conti... The applications of double-gettering technique(DGT)for silicon single crystal indicate its strong gettering effectiveness.By using E-center model,the minimum concentration of phosphorus,gettering process and the continuous gettering ability were investigated.It was pointed out that the gettering functions of phosphorus and dislocation loops result in extremely strong gettering effectiveness of DGT. 展开更多
关键词 PHOSPHORUS DOUBLE CRYSTAL
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THE STUDY ON DEFECTS IN SINGLE CRYSTAL SILICON WAFERS TREATED WITH DOUBLE-GETTERING TECHNIQUE
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作者 MAI Zhenhong DAI Daoyang +2 位作者 ZHOU Shiren ye yizheng ye Shuichi 《Chinese Physics Letters》 SCIE CAS 1986年第3期113-116,共4页
Investigations on the nature and states of the defeats in single crystal wafers treated with double-gettering technique have been carried out by means of optical microscopy,electron microscopy,electron miaroanalysis a... Investigations on the nature and states of the defeats in single crystal wafers treated with double-gettering technique have been carried out by means of optical microscopy,electron microscopy,electron miaroanalysis and spread resistance.Phosphorus profile in these wafers was measured.And the effect of phosphorus on defects and resistivity was determined. 展开更多
关键词 RESISTIVITY PHOSPHORUS WAFER
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