The synthesis of covalent carbon nitride films becomes an important subject in the materials research field.As a new synthetic method two low-energy(400 and 1000eV)nitrogen ion beams are used to bombard on C_(60) thin...The synthesis of covalent carbon nitride films becomes an important subject in the materials research field.As a new synthetic method two low-energy(400 and 1000eV)nitrogen ion beams are used to bombard on C_(60) thin films individually.The bombarded films are used for Raman and x-ray photoelectron spectroscopy(XPS)measurements.The results of the analyses show that under the bombardment of 400eV nitrogen ion beam,the film still contains a large amount of undestructed C_(60) molecules.In the case of l000eV bombardment,only a little amount of C_(60) molecules is kept undestructed.The experimental results also show that the destructed carbon species will combine chemically with nitrogen ions to form stable covalent carbon nitride,confirmed by the Raman peaks of,e.g.,2240cm-1.The XPS Nls and Cls lines also indicate the formation of covalent carbon nitride in the bombarded films.展开更多
In order to obtain high quality carbon nitride films,x-ray photoelectron spectroscopy and Raman spectrum were used to analyze several kinds of film:(a)laser-ablated amorphous carbon(a-C)films,(b)a-C films after a 1 ke...In order to obtain high quality carbon nitride films,x-ray photoelectron spectroscopy and Raman spectrum were used to analyze several kinds of film:(a)laser-ablated amorphous carbon(a-C)films,(b)a-C films after a 1 keV nitrbgen ion beam bombardment.(c)carbon nitride(CN_(x))films synthesized by ablation assisted with ion beam bombardment,(d)CN_(x) films after a 50eV nitrogen ion beam bombardment,and(e)CN_(x) films after a 1 keV nitrogen ion beam bombardment.The comparison among these films showed that the concurrent deposition of CN_(x) films by ablation and a nitrogen ion beam should be better than the post-treatment of a-C films by nitrogen ion beam bombardment.In the case of concurrent deposited CN_(x) films,a post-treatment by a nitrogen ion beam bombardment with an appropriate energy(possibly less than 1 keV)was proposed to improve the ratio of C-N binding structures in the deposited films.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No.59472026Shanghai Foundation of Natural Science under Grant No.95ZE14007.
文摘The synthesis of covalent carbon nitride films becomes an important subject in the materials research field.As a new synthetic method two low-energy(400 and 1000eV)nitrogen ion beams are used to bombard on C_(60) thin films individually.The bombarded films are used for Raman and x-ray photoelectron spectroscopy(XPS)measurements.The results of the analyses show that under the bombardment of 400eV nitrogen ion beam,the film still contains a large amount of undestructed C_(60) molecules.In the case of l000eV bombardment,only a little amount of C_(60) molecules is kept undestructed.The experimental results also show that the destructed carbon species will combine chemically with nitrogen ions to form stable covalent carbon nitride,confirmed by the Raman peaks of,e.g.,2240cm-1.The XPS Nls and Cls lines also indicate the formation of covalent carbon nitride in the bombarded films.
基金Supported by the National Natural Science Foundation of China No.59472026Shanghai Foundation of Natural Science No.95ZE14007.
文摘In order to obtain high quality carbon nitride films,x-ray photoelectron spectroscopy and Raman spectrum were used to analyze several kinds of film:(a)laser-ablated amorphous carbon(a-C)films,(b)a-C films after a 1 keV nitrbgen ion beam bombardment.(c)carbon nitride(CN_(x))films synthesized by ablation assisted with ion beam bombardment,(d)CN_(x) films after a 50eV nitrogen ion beam bombardment,and(e)CN_(x) films after a 1 keV nitrogen ion beam bombardment.The comparison among these films showed that the concurrent deposition of CN_(x) films by ablation and a nitrogen ion beam should be better than the post-treatment of a-C films by nitrogen ion beam bombardment.In the case of concurrent deposited CN_(x) films,a post-treatment by a nitrogen ion beam bombardment with an appropriate energy(possibly less than 1 keV)was proposed to improve the ratio of C-N binding structures in the deposited films.
