GaN-based ultraviolet microdisk laser diode grown on Si

This work reports a demonstration of electrically injected GaN-based near-ultraviolet microdisk laser diodes with a lasing wavelength of 386.3 nm at room temperature. The crack-free laser structure was epitaxially grown on Si substrates using an Al-composed down-graded Al N/AlGaN multilayer buffer to mitigate the mismatches in the lattice constant and coefficient of thermal expansion, and processed into “sandwich-like” microdisk structures with a radius of 12 μm. Air-bridge electrodes were successfully fabricated to enable the device electrical characterization. The electrically pumped lasing of the as-fabricated microdisk laser diodes was evidenced by the rapid narrowing down of electroluminescence spectra and dramatic increase in the light output power, as the current exceeded the threshold of 248 mA.

Key knowledge gaps for One Health approach to mitigate nanoplastic risks

There are increasing concerns over the threat of nanoplastics to environmental and human health.However,multidisciplinary barriers persist between the communities assessing the risks to environmental and human health.As a result,the hazards and risks of nanoplastics remain uncertain.Here,we identify key knowledge gaps by evaluating the exposure of nanoplastics in the environment,assessing their bio-nano interactions,and examining their potential risks to humans and the environment.We suggest considering nanoplastics a complex and dynamic mixture of polymers,additives,and contaminants,with interconnected risks to environmental and human health.We call for comprehensive integration of One Health approach to produce robust multidisciplinary evidence to nanoplastics threats at the planetary level.Although there are many challenges,this holistic approach incorporates the relevance of environmental exposure and multi-sectoral responses,which provide the opportunity to identify the risk mitigation strategies of nanoplastics to build resilient health systems.

Light output improvement of GaN-based light-emitting diodes grown on Si (111) by a via-thin-film structure

This work reports the fabrication of via-thin-film light-emitting diode （via-TF-LED） to improve the light output power （LOP） of blue/white GaN-based LEDs grown on Si （111） substrates. The as-fabricated via-TF-LEDs were featured with a roughened n-GaN surface and the p-GaN surface bonded to a wafer carrier with a silver-based reflective electrode, together with an array of embedded n-type via pillar metal contact from the p-GaN surface etched through the multiple-quantum-wells （MQWs） into the n-GaN layer. When operated at 350 mA, the via-TF- LED gave an enhanced blue LOP by 7.8% and over 3.5 times as compared to the vertical thin-film LED （TF-LED） and the conventional lateral structure LED （LS-LED）. After covering with yellow phosphor that converts some blue photons into yellow light, the via-TF-LED emitted an enhanced white luminous flux by 13.5% and over 5 times, as compared with the white TF-LED and the white LS-LED, respectively. The significant LOP improve- ment of the via-TF-LED was attributed to the elimination of light absorption by the Si （111） epitaxial substrate and the finger-like n-electrodes on the roughened emitting surface.