Despite the recent success of GeSn infrared lasers,the high lasing threshold currently limits their integration into practical applications.While structural defects in epitaxial GeSn layers have been identified as one...Despite the recent success of GeSn infrared lasers,the high lasing threshold currently limits their integration into practical applications.While structural defects in epitaxial GeSn layers have been identified as one of the major bottlenecks towards low-threshold GeSn lasers,the effect of defects on the lasing threshold has not been well studied yet.Herein,we experimentally demonstrate that the reduced defect density in a GeSn-on-insulator substrate improves the lasing threshold significantly.We first present a method of obtaining high-quality GeSn-oninsulator layers using low-temperature direct bonding and chemical–mechanical polishing.Low-temperature photoluminescence measurements reveal that the reduced defect density in GeSn-on-insulator leads to enhanced spontaneous emission and a reduced lasing threshold by0 times andtimes,respectively.Our result presents a new path towards pushing the performance of GeSn lasers to the limit.展开更多
基金Mitacs,Innovation for Defence Excellence and Security,IDEaS,PRIMA Québec,Canada Foundation for Innovation,Canada Research Chairs,Natural Sciences and Engineering Research Council of Canada,iGrant of Singapore A*STAR(AME IRG(A2083c0053))National Research Foundation Singapore(Competitive Research Program(NRF-CRP19-2017-01)+3 种基金NRF-ANR Joint Grant(NRF2018-NRF-ANR009 TIGER))Ministry of Education-Singapore(Ac RF TIER 12019-T1-002-050(RG 148/19(S))AcRF TIER 2(MOE2018-T2-2-011(S))AcRF Tier 2(T2EP50121-0001(MOE-000180-01))。
文摘Despite the recent success of GeSn infrared lasers,the high lasing threshold currently limits their integration into practical applications.While structural defects in epitaxial GeSn layers have been identified as one of the major bottlenecks towards low-threshold GeSn lasers,the effect of defects on the lasing threshold has not been well studied yet.Herein,we experimentally demonstrate that the reduced defect density in a GeSn-on-insulator substrate improves the lasing threshold significantly.We first present a method of obtaining high-quality GeSn-oninsulator layers using low-temperature direct bonding and chemical–mechanical polishing.Low-temperature photoluminescence measurements reveal that the reduced defect density in GeSn-on-insulator leads to enhanced spontaneous emission and a reduced lasing threshold by0 times andtimes,respectively.Our result presents a new path towards pushing the performance of GeSn lasers to the limit.
