为揭示国内外红树林遥感领域的研究历程和发展趋势,以Web of Science核心数据库和CNKI数据库中1985—2021年收录的红树林遥感研究文献为数据支撑,采用科学计量学法和CiteSpace软件绘制红树林遥感研究的可视化知识图谱,并分析该领域的研...为揭示国内外红树林遥感领域的研究历程和发展趋势,以Web of Science核心数据库和CNKI数据库中1985—2021年收录的红树林遥感研究文献为数据支撑,采用科学计量学法和CiteSpace软件绘制红树林遥感研究的可视化知识图谱,并分析该领域的研究热点和发展趋势。结果表明:近30余年,红树林遥感研究的发文数量总体呈逐年上升的趋势,其中英文文献发文数量较多,中国较早关注该领域。英文文献的研究大多数针对全球尺度,研究主题涉及红树林生态系统、动态变化和空间分布,中文文献多从区域尺度出发,主要探究红树林的时空动态和分类方法。英文文献中被引较多的是红树林生态系统研究主题和综述型文献。建议充分利用交叉学科,并发展更为先进的监测手段,为红树林生态恢复和保护提供更有力的技术支持。展开更多
Nano-crystalline silicon(nc-Si)films embedded in SiO2 exhibited strong visible light luminescence at room temperature.The energies of photoluminescence peak were found to be more than 1.9eV and the peaks shifted to hi...Nano-crystalline silicon(nc-Si)films embedded in SiO2 exhibited strong visible light luminescence at room temperature.The energies of photoluminescence peak were found to be more than 1.9eV and the peaks shifted to higher energies when nano-Si films were post-oxidized.The photoluminescence intensity depended significantly on the size of the grains and the characteristics of the oxidized surface.Microcrystalline silicon grains of 2-3nm average size and radiation recombination centers located on the nanoscale silicon grain surfaces and located in the Si oxide layers are considered to be the source of the visible luminescence.展开更多
文摘为揭示国内外红树林遥感领域的研究历程和发展趋势,以Web of Science核心数据库和CNKI数据库中1985—2021年收录的红树林遥感研究文献为数据支撑,采用科学计量学法和CiteSpace软件绘制红树林遥感研究的可视化知识图谱,并分析该领域的研究热点和发展趋势。结果表明:近30余年,红树林遥感研究的发文数量总体呈逐年上升的趋势,其中英文文献发文数量较多,中国较早关注该领域。英文文献的研究大多数针对全球尺度,研究主题涉及红树林生态系统、动态变化和空间分布,中文文献多从区域尺度出发,主要探究红树林的时空动态和分类方法。英文文献中被引较多的是红树林生态系统研究主题和综述型文献。建议充分利用交叉学科,并发展更为先进的监测手段,为红树林生态恢复和保护提供更有力的技术支持。
基金the National Natural Science Foundation of China under Grant No.19475027Natural Science Foundation of China under Grant No.950822.
文摘Nano-crystalline silicon(nc-Si)films embedded in SiO2 exhibited strong visible light luminescence at room temperature.The energies of photoluminescence peak were found to be more than 1.9eV and the peaks shifted to higher energies when nano-Si films were post-oxidized.The photoluminescence intensity depended significantly on the size of the grains and the characteristics of the oxidized surface.Microcrystalline silicon grains of 2-3nm average size and radiation recombination centers located on the nanoscale silicon grain surfaces and located in the Si oxide layers are considered to be the source of the visible luminescence.
