The partial disordering of GaAs/AlGaAs quantum well(QW)material has been obtained by rapid thermal annealing with SO2 dielectric capping film.In this case,the absorption edge of QW material was shifted apparently.A la...The partial disordering of GaAs/AlGaAs quantum well(QW)material has been obtained by rapid thermal annealing with SO2 dielectric capping film.In this case,the absorption edge of QW material was shifted apparently.A laser and a modulator were integrated on a same chip by partial disordering process on the select4d area of QW wafer which was grown by molecular beam epitaxy.展开更多
基金Supported by the National Natural Science Foundation of China,。
文摘The partial disordering of GaAs/AlGaAs quantum well(QW)material has been obtained by rapid thermal annealing with SO2 dielectric capping film.In this case,the absorption edge of QW material was shifted apparently.A laser and a modulator were integrated on a same chip by partial disordering process on the select4d area of QW wafer which was grown by molecular beam epitaxy.
