The idea of using grazing angle ion sputtering to minimize the-formation of In islands on InP(111)surface has been presented and its correctness has been proved by the measurement of electron energy loss spectroscopy.
The surface indium islands originated by argon ion bombardment can be removed by evaporating phosphorous on InP surface followed by annealing.A possible mechanism of elimination of In islands is proposed based on the ...The surface indium islands originated by argon ion bombardment can be removed by evaporating phosphorous on InP surface followed by annealing.A possible mechanism of elimination of In islands is proposed based on the experimental ELS and XPS data.展开更多
文摘The idea of using grazing angle ion sputtering to minimize the-formation of In islands on InP(111)surface has been presented and its correctness has been proved by the measurement of electron energy loss spectroscopy.
文摘The surface indium islands originated by argon ion bombardment can be removed by evaporating phosphorous on InP surface followed by annealing.A possible mechanism of elimination of In islands is proposed based on the experimental ELS and XPS data.