When two beams of incoherent cw mode-locked ps laser pulses were incident upon opposite faces perpendicular to the a-axis of a Cu-doped KNSBN crystal,no mutually pumped phase conjugation as that generated by continuou...When two beams of incoherent cw mode-locked ps laser pulses were incident upon opposite faces perpendicular to the a-axis of a Cu-doped KNSBN crystal,no mutually pumped phase conjugation as that generated by continuous waves was observed,however,the stronger laser beam generated its self-pumped phase conjugation which was weakened by the weaker one.When the intensities of the two beams were equal,self-pumped phase conjugation was completely quenched.展开更多
We present room temperature femtosecond rejection studies on the photocarrier dynamics of GaAs and GaAs/AlGaAs multiple quantum wells(MQW).A rising wing with a time constant of about.5 ps and an increased amplitude pe...We present room temperature femtosecond rejection studies on the photocarrier dynamics of GaAs and GaAs/AlGaAs multiple quantum wells(MQW).A rising wing with a time constant of about.5 ps and an increased amplitude per carrier is observed for the MQW sample at carrier densities lower than 5×10^(11) cm^(-2).This phenomenon is explained as the saturation of the excitonic transitions.展开更多
文摘When two beams of incoherent cw mode-locked ps laser pulses were incident upon opposite faces perpendicular to the a-axis of a Cu-doped KNSBN crystal,no mutually pumped phase conjugation as that generated by continuous waves was observed,however,the stronger laser beam generated its self-pumped phase conjugation which was weakened by the weaker one.When the intensities of the two beams were equal,self-pumped phase conjugation was completely quenched.
基金Supported by the Science Foundation of Zhongshan University.
文摘We present room temperature femtosecond rejection studies on the photocarrier dynamics of GaAs and GaAs/AlGaAs multiple quantum wells(MQW).A rising wing with a time constant of about.5 ps and an increased amplitude per carrier is observed for the MQW sample at carrier densities lower than 5×10^(11) cm^(-2).This phenomenon is explained as the saturation of the excitonic transitions.