Plasma source ion nitriding has emerged as a low-temperature,low-pressure nitriding approach for implanting nitrogen ions and then diffusing them into bulk materials.The ion-plating B-C films were nitrided to synthesi...Plasma source ion nitriding has emerged as a low-temperature,low-pressure nitriding approach for implanting nitrogen ions and then diffusing them into bulk materials.The ion-plating B-C films were nitrided to synthesize B-C-N films at a nitriding temperature from 300 to 500℃.The x-ray photoelectron spectroscopy and diffuse reflectance Fourier transform infrared spectra analyses showed that the amorphous B-C-N films synthesized at 500℃ are composed mainly of cubic-BN-like and hexagonal-BN-like plain microdomains.The higher nitriding temperature contributes to the formation of cubic-BN-like B-C-N structure in the B-C-N films.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No.59402009.
文摘Plasma source ion nitriding has emerged as a low-temperature,low-pressure nitriding approach for implanting nitrogen ions and then diffusing them into bulk materials.The ion-plating B-C films were nitrided to synthesize B-C-N films at a nitriding temperature from 300 to 500℃.The x-ray photoelectron spectroscopy and diffuse reflectance Fourier transform infrared spectra analyses showed that the amorphous B-C-N films synthesized at 500℃ are composed mainly of cubic-BN-like and hexagonal-BN-like plain microdomains.The higher nitriding temperature contributes to the formation of cubic-BN-like B-C-N structure in the B-C-N films.
