Growing semiconductor laser sources on silicon is a crucial but challenging technology for developing photonic integrated circuits(PICs).InAs/GaAs quantum dot(Qdot)lasers have successfully circumvented the mismatch pr...Growing semiconductor laser sources on silicon is a crucial but challenging technology for developing photonic integrated circuits(PICs).InAs/GaAs quantum dot(Qdot)lasers have successfully circumvented the mismatch problem betweenⅢ–Ⅴmaterials and Ge or Si,and have demonstrated efficient laser emission.In this paper,we review dynamical characteristics of Qdot lasers epitaxially grown on Ge or Si,in comparison with those of Qdot lasers on native GaAs substrate.We discuss properties of linewidth broadening factor,laser noise and its sensitivity to optical feedback,intensity modulation,as well as mode locking operation.The investigation of these dynamical characteristics is beneficial for guiding the design of PICs in optical communications and optical computations.展开更多
This work experimentally and theoretically demonstrates the effect of excited state lasing on the reflection sensitivity of dual-state quantum dot lasers,showing that the laser exhibits higher sensitivity to external ...This work experimentally and theoretically demonstrates the effect of excited state lasing on the reflection sensitivity of dual-state quantum dot lasers,showing that the laser exhibits higher sensitivity to external optical feedback when reaching the excited state lasing threshold.This sensitivity can be degraded by increasing the excited-to-ground-state energy separation,which results in a high excited-to-ground-state threshold ratio.In addition,the occurrence of excited state lasing decreases the damping factor and increases the linewidth enhancement factor,which leads to a low critical feedback level.These findings illuminate a path to fabricate reflectioninsensitive quantum dot lasers for isolator-free photonic integrated circuits.展开更多
基金supported by National Natural Science Foundation of China (No. 61804095)by Shanghai Pujiang Program (No. 17PJ1406500)
文摘Growing semiconductor laser sources on silicon is a crucial but challenging technology for developing photonic integrated circuits(PICs).InAs/GaAs quantum dot(Qdot)lasers have successfully circumvented the mismatch problem betweenⅢ–Ⅴmaterials and Ge or Si,and have demonstrated efficient laser emission.In this paper,we review dynamical characteristics of Qdot lasers epitaxially grown on Ge or Si,in comparison with those of Qdot lasers on native GaAs substrate.We discuss properties of linewidth broadening factor,laser noise and its sensitivity to optical feedback,intensity modulation,as well as mode locking operation.The investigation of these dynamical characteristics is beneficial for guiding the design of PICs in optical communications and optical computations.
基金National Key Research and Development Program of China(2022YFB2803600)National Natural Science Foundation of China(62204072,U22A2093)+1 种基金Basic and Applied Basic Research Foundation of Guangdong Province(2021A1515110076,2023A1515012304)Shenzhen Science and Technology Innovation Program(GXWD20220811163623002,RCBS20210609103824050)。
文摘This work experimentally and theoretically demonstrates the effect of excited state lasing on the reflection sensitivity of dual-state quantum dot lasers,showing that the laser exhibits higher sensitivity to external optical feedback when reaching the excited state lasing threshold.This sensitivity can be degraded by increasing the excited-to-ground-state energy separation,which results in a high excited-to-ground-state threshold ratio.In addition,the occurrence of excited state lasing decreases the damping factor and increases the linewidth enhancement factor,which leads to a low critical feedback level.These findings illuminate a path to fabricate reflectioninsensitive quantum dot lasers for isolator-free photonic integrated circuits.
