期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Photoelastic Fabry-Perot Optical Modulator Based on a Silicon-on-Insulator Structure
1
作者 yulishen GUANZF 《Semiconductor Photonics and Technology》 CAS 1996年第3期210-213,共4页
A simple photoelastic optical modulator with a Fabry-Perot cavity based on the silicon-on-insulator system was fabricated. A 50 % modulation depth has been obtained at current density of about 1. 5 x 103 A/cm2. The in... A simple photoelastic optical modulator with a Fabry-Perot cavity based on the silicon-on-insulator system was fabricated. A 50 % modulation depth has been obtained at current density of about 1. 5 x 103 A/cm2. The insertion loss was about 15 dB. 展开更多
关键词 MODULATOR Photoelastic SILICON-ON-INSULATOR
下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部