The use of high-permittivity(high-k) thin films as gate dielectrics is essential in the development of lowpower electronics,In this work,rare-earth thulium oxide(Tm_(2)O_(3)) thin films were prepared by a facile solut...The use of high-permittivity(high-k) thin films as gate dielectrics is essential in the development of lowpower electronics,In this work,rare-earth thulium oxide(Tm_(2)O_(3)) thin films were prepared by a facile solution process and annealed at various temperatures from 400 to 700℃.The evolution of the physical and dielectric properties of Tm_(2)O_(3) thin film with annealing temperature was investigated.It is demonstrated that the Tm_(2)O_(3) thin film annealed at 600℃ exhibits the optimal performance,including a low leakage current of 3×10^(-10) A/cm^(2),a large areal capacitance of 250 nF/cm^(2) at 100 Hz,and a high permittivity value of 14.2.The Tm_(2)O_(3) thin film as a gate insulator was integrated into the thin film transistor(TFT) employing In_(2)O_(3)-based semiconducting channels.The In_(2)O_(3) TFT with 600℃-annealed Tm_(2)O_(3) dielectric exhibits the superior perfo rmance,with a high I_(on)/I_(off) of 1.65×10^(7),a small subthre shold swing(SS) value of 0.2 V/dec,a V_(TH) of+1.8 V,and a mobility of 1.68 cm^(2)/(V·s).Furthermore,an inverter constructed by connecting the TFT with a resistor exhibits full-swing characteristics.This work provides a facile and appealing method for preparing the high-k Tm_(2)O_(3) thin films as alternative gate dielectrics with the potential for use in low-power electronics and logic circuit applications.展开更多
基金supported by the National Natural Science Foundation of China (21978142,52005277)。
文摘The use of high-permittivity(high-k) thin films as gate dielectrics is essential in the development of lowpower electronics,In this work,rare-earth thulium oxide(Tm_(2)O_(3)) thin films were prepared by a facile solution process and annealed at various temperatures from 400 to 700℃.The evolution of the physical and dielectric properties of Tm_(2)O_(3) thin film with annealing temperature was investigated.It is demonstrated that the Tm_(2)O_(3) thin film annealed at 600℃ exhibits the optimal performance,including a low leakage current of 3×10^(-10) A/cm^(2),a large areal capacitance of 250 nF/cm^(2) at 100 Hz,and a high permittivity value of 14.2.The Tm_(2)O_(3) thin film as a gate insulator was integrated into the thin film transistor(TFT) employing In_(2)O_(3)-based semiconducting channels.The In_(2)O_(3) TFT with 600℃-annealed Tm_(2)O_(3) dielectric exhibits the superior perfo rmance,with a high I_(on)/I_(off) of 1.65×10^(7),a small subthre shold swing(SS) value of 0.2 V/dec,a V_(TH) of+1.8 V,and a mobility of 1.68 cm^(2)/(V·s).Furthermore,an inverter constructed by connecting the TFT with a resistor exhibits full-swing characteristics.This work provides a facile and appealing method for preparing the high-k Tm_(2)O_(3) thin films as alternative gate dielectrics with the potential for use in low-power electronics and logic circuit applications.
