This paper proposes a reasonable radiation-resistant composite channel structure for In P HEMTs.The simulation results show that the composite channel structure has excellent electrical properties due to increased mod...This paper proposes a reasonable radiation-resistant composite channel structure for In P HEMTs.The simulation results show that the composite channel structure has excellent electrical properties due to increased modulation doping efficiency and carrier confinement.Moreover,the direct current(DC)and radio frequency(RF)characteristics and their reliability between the single channel structure and the composite channel structure after 75-ke V proton irradiation are compared in detail.The results show that the composite channel structure has excellent radiation tolerance.Mechanism analysis demonstrates that the composite channel structure weakens the carrier removal effect.This phenomenon can account for the increase of native carrier and the decrease of defect capture rate.展开更多
基金the National Natural Science Foundation of China(Grant No.11775191)the Natural Science Foundation of Henan Province,China(Grant No.202300410379)+2 种基金the Promotion Funding for Excellent Young Backbone Teacher of Henan Province,China(Grant No.2019GGJS017)Key Technologies Research and Development Program of Henan Province,China(Grant No.202102210321)the Promotion Project for Physics Discipline in Zhengzhou University,China(Grant No.2018WLTJ01)。
文摘This paper proposes a reasonable radiation-resistant composite channel structure for In P HEMTs.The simulation results show that the composite channel structure has excellent electrical properties due to increased modulation doping efficiency and carrier confinement.Moreover,the direct current(DC)and radio frequency(RF)characteristics and their reliability between the single channel structure and the composite channel structure after 75-ke V proton irradiation are compared in detail.The results show that the composite channel structure has excellent radiation tolerance.Mechanism analysis demonstrates that the composite channel structure weakens the carrier removal effect.This phenomenon can account for the increase of native carrier and the decrease of defect capture rate.