Dependence of switching process on the perpendicular magnetic anisotropy constant in P-MTJ

We investigate the dependence of the switching process on the perpendicular magnetic anisotropy （PMA） constant in perpendicular spin transfer torque magnetic tunnel junctions （P-MTJs） using micromagnetic simulations. It is found that the final stable states of the magnetization distribution of the free layer after switching can be divided into three different states based on different PMA constants： vortex, uniform, and steady. Different magnetic states can be attributed to a trade-off among demagnetization, exchange, and PMA energies. The generation of the vortex state is also related to the non-uniform stray field from the polarizer, and the final stable magnetization is sensitive to the PMA constant. The vortex and uniform states have different switching processes, and the switching time of the vortex state is longer than that of the uniform state due to hindrance by the vortex.

Effect of temperature on heavy ion-induced single event transient on 16-nm FinFET inverter chains

The variations of single event transient(SET)pulse width of high-LET heavy ion irradiation in 16-nm-thick bulk silicon fin field-effect transistor(Fin FET)inverter chains with different driven strengths are measured at different temperatures.Three-dimensional(3D)technology computer-aided design simulations are carried out to study the SET pulse width and saturation current varying with temperature.Experimental and simulation results indicate that the increase in temperature will enhance the parasitic bipolar effect of bulk Fin FET technology,resulting in the increase of SET pulse width.On the other hand,the increase of inverter driven strength will change the layout topology,which has a complex influence on the SET temperature effects of Fin FET inverter chains.The experimental and simulation results show that the device with the strongest driven strength has the least dependence on temperature.