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Flexible biomimetic olfactory neurons based on organic heterojunction
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作者 Tianyang Feng Jialin Meng +6 位作者 Hang Xu yafen yang Tianyu Wang Hao Zhu Qingqing Sun David Wei Zhang Lin Chen 《Journal of Semiconductors》 EI CAS 2024年第12期80-86,共7页
Simulating the human olfactory nervous system is one of the key issues in the field of neuromorphic computing.Olfac-tory neurons interact with gas molecules,transmitting and storing odor information to the olfactory c... Simulating the human olfactory nervous system is one of the key issues in the field of neuromorphic computing.Olfac-tory neurons interact with gas molecules,transmitting and storing odor information to the olfactory center of the brain.In order to emulate the complex functionalities of olfactory neurons,this study presents a flexible olfactory synapse transistor(OST)based on pentacene/C8-BTBT organic heterojunction.By modulating the interface between the energy bands of the organic semiconductor layers,this device demonstrates high sensitivity(ppb level)and memory function for NH3 sensing.Typi-cal synaptic behaviors triggered by NH_(3) pulses have been successfully demonstrated,such as inhibitory postsynaptic currents(IPSC),paired-pulse depression(PPD),long-term potentiation/depression(LTP/LTD),and transition from short-term depression(STD)to long-term depression(LTD).Furthermore,this device maintains stable olfactory synaptic functions even under differ-ent bending conditions,which can present new insights and possibilities for flexible synaptic systems and bio-inspired elec-tronic products. 展开更多
关键词 olfactory neurons organic transistor gas-modulated flexible electronic device
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Research on process-induced effect in 14-nm FinFET gate formation and digital unit optimization design
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作者 yafen yang Hang Xu +2 位作者 Tianyang Feng Jianbin Guo David Wei Zhang 《Journal of Semiconductors》 EI CAS 2024年第12期88-93,共6页
The advanced fin-shaped field-effect transistor(FinFET)technology offers higher integration density and stronger channel control capabilities,however,more complex process effects are also introduced which have signifi... The advanced fin-shaped field-effect transistor(FinFET)technology offers higher integration density and stronger channel control capabilities,however,more complex process effects are also introduced which have significant influence on device performance.To address these issues,we complete a design-technology co-optimization(DTCO)focused on FinFET,including both process-induced effect during gate formation and corresponding digital unit optimization design.The 14 nm Fin-FET complementary metal oxide semiconductor(CMOS)technology is used to illustrate the sensitivity of transistor perfor-mance to process-induced effect,specifically the poly pitch effect(PPE)and cut poly effect(CPE).Predictive technology com-puter aided design(TCAD)simulations have been carried out to evaluate the transistor performance in advance.Based on the results,optimizations in digital unit design is proposed.Fall delay of the digital unit inverter is decreased by 0.7%,and the rise delay is decreased by 2.1%.For multiple selector(MUX2NV),the delay decreases by 4.64%for rise and 3.56%for drop,respec-tively. 展开更多
关键词 FinFET TCAD process-induced effect digital unit optimization design
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Research on the framework of e-government body of knowledge
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作者 yafen yang 《Journal of Library Science in China》 2015年第1期225-226,共2页
It has been more than 20 years since the concept of'e-government'was first proposed.However,due to the sophisticated research object and external theoretical reference,it is difficult to establish a scientific... It has been more than 20 years since the concept of'e-government'was first proposed.However,due to the sophisticated research object and external theoretical reference,it is difficult to establish a scientific,systematic and logical theory system of e-government which can be accepted by most scholars.So far,it has been hard to get a comprehensive,unified and rational grasp of 展开更多
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