期刊文献+
共找到4篇文章
< 1 >
每页显示 20 50 100
ZIF-67膜在AZ31镁合金微弧氧化防腐涂层上的合成
1
作者 陈勇花 吴量 +6 位作者 姚文辉 陈燕宁 吴嘉豪 袁媛 蒋斌 Andrej ATRENS 潘复生 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2023年第9期2631-2645,共15页
为了提高AZ31镁合金的耐蚀性和金属有机骨架MOFs涂层的结合力,通过在AZ31镁合金微弧氧化(MAO)涂层上原位生长,制备MAO/ZIF-67(微弧氧化/钴基金属有机骨架)复合涂层。结果表明,具有菱形十二面体的ZIF-67在MAO涂层表面均匀生长,与基体具... 为了提高AZ31镁合金的耐蚀性和金属有机骨架MOFs涂层的结合力,通过在AZ31镁合金微弧氧化(MAO)涂层上原位生长,制备MAO/ZIF-67(微弧氧化/钴基金属有机骨架)复合涂层。结果表明,具有菱形十二面体的ZIF-67在MAO涂层表面均匀生长,与基体具有良好的附着力,这使得MAO/ZIF-67复合涂层具有良好的耐蚀性。实验证明,ZIF-67能有效封闭MAO涂层的孔隙,增加腐蚀介质侵入路径的曲折度,显著提高镁合金的耐蚀性。此外,MAO预处理使涂层具有强的附着力,这更有利于ZIF-67密封微孔。本研究对于降低MOF涂层在所有金属基底上的应用限制具有重要意义。 展开更多
关键词 金属有机框架 ZIF-67 微弧氧化 防腐 涂层 Mg−Al−Zn合金
下载PDF
电解液pH值对镁合金表面灌注液体型光滑多孔表面耐腐蚀性能的影响
2
作者 姚文辉 詹国祥 +7 位作者 陈勇花 秦洁 吴量 陈燕宁 吴嘉豪 蒋斌 Andrej ATRENS 潘复生 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2023年第11期3309-3318,共10页
在AZ31镁合金表面制备灌注液体型光滑多孔表面(SLIPS),从而为镁合金提供腐蚀防护。将粗糙多孔的层状双金属氢氧化物(LDH)作为纳米容器,用以盛放液体润滑液。通过调节电解液的pH值,获得用于构筑SLIPS的最佳LDH膜层。研究不同pH值对SLIPS... 在AZ31镁合金表面制备灌注液体型光滑多孔表面(SLIPS),从而为镁合金提供腐蚀防护。将粗糙多孔的层状双金属氢氧化物(LDH)作为纳米容器,用以盛放液体润滑液。通过调节电解液的pH值,获得用于构筑SLIPS的最佳LDH膜层。研究不同pH值对SLIPS表面形貌、表面润湿性和电化学行为的影响规律。结果表明,当pH值为10.5时,所制备的MgAl-LDH膜层厚度最大,为3.51μm,其可盛放最多的硅油,质量高达0.22mg/mm^(2),使得该MgAl-LDH膜层所构筑的SLIPS可为镁合金提供最优的腐蚀防护性能,腐蚀电流密度最低,为3.72×10^(-9)A/cm^(2)。另一方面,与超疏水表面相比,无论在电化学测试还是在长期浸泡试验中,SLIPS均可为AZ31镁合金基体提供更好的腐蚀防护。镁合金耐腐蚀性能的提高将进一步促进其在实践中的广泛应用。 展开更多
关键词 灌注液体型光滑多孔表面 电解液pH值 耐蚀性 表面疏水性 AZ31镁合金
下载PDF
Berberine Ameliorates High-Fat Diet-Induced Non-Alcoholic Fatty Liver Disease in Rats via Activation of SIRT3/AMPK/ACC Pathway 被引量:24
3
作者 Yu-pei ZHANG Yuan-jun DENG +8 位作者 Kai-rui TANG Run-sen chen Shu LIANG Yin-ji LIANG Li HAN Ling JIN Zi-en LIANG yan-ning chen Qin-he YANG 《Current Medical Science》 SCIE CAS 2019年第1期37-43,共7页
This study aimed to verify the effects of berberine(BBR)on the fat metabolism proteins involved in the sirtuin 3(SIRT3)/adenosine 5'-monophosphate(AMP)-activated protein kinase(AMPK)/acetyl-CoA carboxylase(ACC)pat... This study aimed to verify the effects of berberine(BBR)on the fat metabolism proteins involved in the sirtuin 3(SIRT3)/adenosine 5'-monophosphate(AMP)-activated protein kinase(AMPK)/acetyl-CoA carboxylase(ACC)pathway in the liver tissues of rats with high-fat diet(HFD)-induced non-alcoholic fatty liver disease(NAFLD).Forty-eight rats were randomly divided into the normal control(NC)group,HFD group or BBR group,with 16 rats in each group.After 8 and 16 weeks of treatment,serum and liver samples were collected.Subsequently,body parameters,biochemical parameters and liver pathology were examined.The expression levels of proteins involved in the SIRT3/AMPK/ACC pathway in the liver were detected by Western blotting.After 8 and 16 weeks of a HFD,the successful establishment of rat models with different degrees of NAFLD was confirmed by hematoxylin and eosin(H&E)and Oil Red O staining.NAFLD rat models exhibited obesity and hyperlipidemia,and the protein expression levels of SIRT3,p-AMPK.p-ACC,and CPT-1A in the liver were significantly decreased compared to those in the NC group.The concurrent administration of BBR with the HFD effectively improved serum and liver lipid profiles and ameliorated liver injury.Furthermore,the protein expression levels of SIRT3,p-AMPK,p-ACC,and CPT-1 A in the liver were significantly increased in the BBR group as compared with those in the HFD group.In conclusion,our data suggest that the mechanism by which BBR ameliorates HFD-induced hepatic steatosis may be related to the activation of the SIRT3/AMPK/ACC pathway in the liver. 展开更多
关键词 BERBERINE non-alcoholic FATTY liver disease SIRTUIN 3 LIPID METABOLISM
下载PDF
Degradation of gate-recessed MOS-HEMTs and conventional HEMTs under DC electrical stress
4
作者 Yi-Dong Yuan Dong-Yan Zhao +19 位作者 Yan-Rong Cao Yu-Bo Wang Jin Shao yan-ning chen Wen-Long He Jian Du Min Wang Ye-Ling Peng Hong-Tao Zhang Zhen Fu chen Ren Fang Liu Long-Tao Zhang Yang Zhao Ling Lv Yi-Qiang Zhao Xue-Feng Zheng Zhi-Mei Zhou Yong Wan Xiao-Hua Ma 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第7期478-483,共6页
The performance degradation of gate-recessed metal–oxide–semiconductor high electron mobility transistor(MOSHEMT)is compared with that of conventional high electron mobility transistor(HEMT)under direct current(DC)s... The performance degradation of gate-recessed metal–oxide–semiconductor high electron mobility transistor(MOSHEMT)is compared with that of conventional high electron mobility transistor(HEMT)under direct current(DC)stress,and the degradation mechanism is studied.Under the channel hot electron injection stress,the degradation of gate-recessed MOS-HEMT is more serious than that of conventional HEMT devices due to the combined effect of traps in the barrier layer,and that under the gate dielectric of the device.The threshold voltage of conventional HEMT shows a reduction under the gate electron injection stress,which is caused by the barrier layer traps trapping the injected electrons and releasing them into the channel.However,because of defects under gate dielectrics which can trap the electrons injected from gate and deplete part of the channel,the threshold voltage of gate-recessed MOS-HEMT first increases and then decreases as the conventional HEMT.The saturation phenomenon of threshold voltage degradation under high field stress verifies the existence of threshold voltage reduction effect caused by gate electron injection. 展开更多
关键词 gate-recessed MOS-HEMTs channel electron injection gate electron injection barrier layer traps
下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部