β-gallium oxide(β-Ga2O3),as the typical representative of the fourth generation of semiconductors,has attracted increasing attention owing to its ultra-wide bandgap,superior optical properties,and excellent toleranc...β-gallium oxide(β-Ga2O3),as the typical representative of the fourth generation of semiconductors,has attracted increasing attention owing to its ultra-wide bandgap,superior optical properties,and excellent tolerance to high temperature and radiation.Compared to the single crystals of other semiconductors,high-quality and large-sizeβ-Ga_(2)O_(3)single crystals can be grown with low-cost melting methods,making them highly competitive.In this review,the growth process,defects,and dopants ofβ-Ga_(2)O_(3)are primarily discussed.Firstly,the growth process(e.g.,decomposition,crucible corrosion,spiral growth,and development)ofβ-Ga_(2)O_(3)single crystals are summarized and compared in detail.Then,the defects ofβ-Ga_(2)O_(3)single crystals and the influence of defects on Schottky barrier diode(SBD)devices are emphatically discussed.Besides,the influences of impurities and intrinsic defects on the electronic and optical properties ofβ-Ga_(2)O_(3)are also briefly discussed.Concluding this comprehensive analysis,the article offers a concise summary of the current state,challenges and prospects ofβ-Ga_(2)O_(3)single crystals.展开更多
文摘β-gallium oxide(β-Ga2O3),as the typical representative of the fourth generation of semiconductors,has attracted increasing attention owing to its ultra-wide bandgap,superior optical properties,and excellent tolerance to high temperature and radiation.Compared to the single crystals of other semiconductors,high-quality and large-sizeβ-Ga_(2)O_(3)single crystals can be grown with low-cost melting methods,making them highly competitive.In this review,the growth process,defects,and dopants ofβ-Ga_(2)O_(3)are primarily discussed.Firstly,the growth process(e.g.,decomposition,crucible corrosion,spiral growth,and development)ofβ-Ga_(2)O_(3)single crystals are summarized and compared in detail.Then,the defects ofβ-Ga_(2)O_(3)single crystals and the influence of defects on Schottky barrier diode(SBD)devices are emphatically discussed.Besides,the influences of impurities and intrinsic defects on the electronic and optical properties ofβ-Ga_(2)O_(3)are also briefly discussed.Concluding this comprehensive analysis,the article offers a concise summary of the current state,challenges and prospects ofβ-Ga_(2)O_(3)single crystals.
