We demonstrate a low-noise,high-gain,and large-dynamic-range photodetector(PD)based on a junction field-effect transistor(JFET)and a charge amplifier for the measurement of quantum noise in Bell-state detection(BSD).P...We demonstrate a low-noise,high-gain,and large-dynamic-range photodetector(PD)based on a junction field-effect transistor(JFET)and a charge amplifier for the measurement of quantum noise in Bell-state detection(BSD).Particular photodiode junction capacitance allows the silicon N-channel JFET 2sk152 to be matched to the noise requirement for charge amplifier A250.The electronic noise of the PD is effectively suppressed and the signal-to-noise ratio(SNR)is up to 15 dB at the analysis frequency of 2.75 MHz for a coherent laser power of 50.08µW.By combining of the inductor and capacitance,the alternating current(AC)and direct current(DC)branches of the PD can operate linearly in a dynamic range from 25.06µW to 17.50 mW.The PD can completely meet the requirements of SNR and dynamic range for BSD in quantum optics experiments.展开更多
基金Project supported by the Scientific and Technological Innovation Programs of Higher Education Institutions in Shanxi(STIP)(Nos.2021L562 and 2022L573)the Key Research and Development Projects for Attarcting High-Level Scientific and Technological Talents to Lvliang City(No.2021RC-2-27)+3 种基金the Open Fund of the Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques(South China University of Technology)(No.2021-06)the Key Research and Development Projects in the Field of Social Development of Lvliang City(No.2022SHFZ43)Higher Education Reform and Innovation Project of Shanxi Province,China(Nos.J2021718,J2021744,and J2021717)the Innovation and Entrepreneurship Training Program for College Students,China(No.202310812012)。
文摘We demonstrate a low-noise,high-gain,and large-dynamic-range photodetector(PD)based on a junction field-effect transistor(JFET)and a charge amplifier for the measurement of quantum noise in Bell-state detection(BSD).Particular photodiode junction capacitance allows the silicon N-channel JFET 2sk152 to be matched to the noise requirement for charge amplifier A250.The electronic noise of the PD is effectively suppressed and the signal-to-noise ratio(SNR)is up to 15 dB at the analysis frequency of 2.75 MHz for a coherent laser power of 50.08µW.By combining of the inductor and capacitance,the alternating current(AC)and direct current(DC)branches of the PD can operate linearly in a dynamic range from 25.06µW to 17.50 mW.The PD can completely meet the requirements of SNR and dynamic range for BSD in quantum optics experiments.
