A new heterocyclic fulgide:E-(α)-(1,2-dimethyl-4-isopropyl-5-phenyl)-3-pyrryl ethylidene (isopropylidene)succinic anhydride(1) has been synthesized.Themolecular conformation and atomic labelling structure of (1) was ...A new heterocyclic fulgide:E-(α)-(1,2-dimethyl-4-isopropyl-5-phenyl)-3-pyrryl ethylidene (isopropylidene)succinic anhydride(1) has been synthesized.Themolecular conformation and atomic labelling structure of (1) was obtained by X-ray analyses.Compound(1) shows a twisted structure between different ring systems.The short distance beteen C1 atom and C22 atom(3.567A) offers a favourable structure for the photoinduced intramolecular cyclization of 1.展开更多
1, 2 - bis(3-Methylbenzo[b]thiophen-2-yl)cycloalkene derivatives 3a, 3b and 1 - (2-methylbenzo[b]thiophen - 3 - yl) - 2 - (3 - methylbenzo[b]thiophen - 2 - yl)cyclohexene 9 were synthesized. The obtained compounds exh...1, 2 - bis(3-Methylbenzo[b]thiophen-2-yl)cycloalkene derivatives 3a, 3b and 1 - (2-methylbenzo[b]thiophen - 3 - yl) - 2 - (3 - methylbenzo[b]thiophen - 2 - yl)cyclohexene 9 were synthesized. The obtained compounds exhibited photochromic property and the absorption bands of the colored forms 4a, 4b and 10 centered between 360-440 nm thus possessing the sensitivity at the wavelength of the newly developed InGaN diode laser.展开更多
文摘A new heterocyclic fulgide:E-(α)-(1,2-dimethyl-4-isopropyl-5-phenyl)-3-pyrryl ethylidene (isopropylidene)succinic anhydride(1) has been synthesized.Themolecular conformation and atomic labelling structure of (1) was obtained by X-ray analyses.Compound(1) shows a twisted structure between different ring systems.The short distance beteen C1 atom and C22 atom(3.567A) offers a favourable structure for the photoinduced intramolecular cyclization of 1.
文摘1, 2 - bis(3-Methylbenzo[b]thiophen-2-yl)cycloalkene derivatives 3a, 3b and 1 - (2-methylbenzo[b]thiophen - 3 - yl) - 2 - (3 - methylbenzo[b]thiophen - 2 - yl)cyclohexene 9 were synthesized. The obtained compounds exhibited photochromic property and the absorption bands of the colored forms 4a, 4b and 10 centered between 360-440 nm thus possessing the sensitivity at the wavelength of the newly developed InGaN diode laser.
