Charge trap density and carrier mobility of perovskite materials are the critical properties of perovskite solar cells.The space charge limited current(SCLC)method,which measures a dark current–voltage(I-V)curve of a...Charge trap density and carrier mobility of perovskite materials are the critical properties of perovskite solar cells.The space charge limited current(SCLC)method,which measures a dark current–voltage(I-V)curve of a single-carrier device has found extensive use for studying the trap density and charge carrier mobility in perovskite materials.Herein,it was found that the electron-and hole-current in organo-lead perovskite-based single-carrier device undergoes significant hysteresis under forward and reverse scanning due to the mobile ions.In addition,it was also observed that measuring history has a detrimental effect on hysteresis resulting in possible overestimation or underestimation of the extracted electrical values from the SCLC measurement.In the forward/reverse scanning process,the mobile ionic defects enhance/shield the charge in the traps due to ionic charging/discharging,thereby increasing/reducing the interface barrier and net charge in the I-V scanning,which in turn affects the determination of transport properties of the carrier.These results raise quite a few doubts over the direct application of classical SCLC measurements for the accurate characterization of intrinsic transport properties of the mixed ionicelectronic perovskite.展开更多
基金supported in part by the National Natural Science Foundation of China(6200406821607041+4 种基金12147219)the Zhejiang Provincial Natural Science Foundation of China(Y20F040001)the Natural Science Foundation of Huzhou City,China(2019YZ02)the Syracuse University Startup Fundthe U.S.-Egypt Science and Technology(S&T)Joint Fund。
文摘Charge trap density and carrier mobility of perovskite materials are the critical properties of perovskite solar cells.The space charge limited current(SCLC)method,which measures a dark current–voltage(I-V)curve of a single-carrier device has found extensive use for studying the trap density and charge carrier mobility in perovskite materials.Herein,it was found that the electron-and hole-current in organo-lead perovskite-based single-carrier device undergoes significant hysteresis under forward and reverse scanning due to the mobile ions.In addition,it was also observed that measuring history has a detrimental effect on hysteresis resulting in possible overestimation or underestimation of the extracted electrical values from the SCLC measurement.In the forward/reverse scanning process,the mobile ionic defects enhance/shield the charge in the traps due to ionic charging/discharging,thereby increasing/reducing the interface barrier and net charge in the I-V scanning,which in turn affects the determination of transport properties of the carrier.These results raise quite a few doubts over the direct application of classical SCLC measurements for the accurate characterization of intrinsic transport properties of the mixed ionicelectronic perovskite.
