This paper reports on high-performance waveguide-integrated germanium photodiodes for optical communications applications.200 mm wafers and production tools were used to fabricate the devices.Yields over 97%were obta...This paper reports on high-performance waveguide-integrated germanium photodiodes for optical communications applications.200 mm wafers and production tools were used to fabricate the devices.Yields over 97%were obtained for three different compact photodiodes(10×10μm and intrinsic region width of 0.5,0.7,and 1μm)within the same batch of three wafers.Those photodiodes exhibit low dark currents under reverse bias with median values of 74,62,and 61 nA for intrinsic widths of 0.5,0.7,and 1μm,respectively,over a full wafer.Responsivities up to 0.78 A∕W at 1550 nm and zero bias were measured.Zero bias operation is possible for 25 and 40 Gbps with receiver sensitivity estimated to−13.9 and−12.3 dBm,respectively.展开更多
文摘This paper reports on high-performance waveguide-integrated germanium photodiodes for optical communications applications.200 mm wafers and production tools were used to fabricate the devices.Yields over 97%were obtained for three different compact photodiodes(10×10μm and intrinsic region width of 0.5,0.7,and 1μm)within the same batch of three wafers.Those photodiodes exhibit low dark currents under reverse bias with median values of 74,62,and 61 nA for intrinsic widths of 0.5,0.7,and 1μm,respectively,over a full wafer.Responsivities up to 0.78 A∕W at 1550 nm and zero bias were measured.Zero bias operation is possible for 25 and 40 Gbps with receiver sensitivity estimated to−13.9 and−12.3 dBm,respectively.
