This article reviews advanced process and electron device technology of integrated circuits,including recent featuring progress and potential solutions for future development.In 5 years,for pushing the performance of ...This article reviews advanced process and electron device technology of integrated circuits,including recent featuring progress and potential solutions for future development.In 5 years,for pushing the performance of fin field-effect transistors(FinFET)to its limitations,several processes and device boosters are provided.Then,the three-dimensional(3 D)integration schemes with alternative materials and device architectures will pave paths for future technology evolution.Finally,it could be concluded that Moore’s law will undoubtedly continue in the next 15 years.展开更多
基金the support from the members of Integrated Circuit Advanced Process R&D Center,Institute of Microelectronics,Chinese Academy of Sciencessupported in part by the National Key Project of Science and Technology of China(No.2017ZX02315001-002)。
文摘This article reviews advanced process and electron device technology of integrated circuits,including recent featuring progress and potential solutions for future development.In 5 years,for pushing the performance of fin field-effect transistors(FinFET)to its limitations,several processes and device boosters are provided.Then,the three-dimensional(3 D)integration schemes with alternative materials and device architectures will pave paths for future technology evolution.Finally,it could be concluded that Moore’s law will undoubtedly continue in the next 15 years.
