Owing to the advantages of ultra-wide bandgap and rich material systems,gallium oxide(Ga_(2)O_(3))has emerged as a highly viable semiconductor material for new researches.This article mainly focuses on the growth proc...Owing to the advantages of ultra-wide bandgap and rich material systems,gallium oxide(Ga_(2)O_(3))has emerged as a highly viable semiconductor material for new researches.This article mainly focuses on the growth processes,material characteristics,and applications of Ga_(2)O_(3).Compared with single crystals and the epitaxial growth of other wide-bandgap semiconductors,large-size and high-quality𝛽-Ga_(2)O_(3) single crystals can be efficiently grown with a low cost,making them highly competitive.Thanks to the availability of high-quality single crystals,epi-taxial films,and rich material systems,high-performance semiconductor devices based on Ga_(2)O_(3) go through a booming development in recent years.The defects and interfaces of Ga_(2)O_(3) are comprehensively analyzed owing to their significant influence on practical applications.In this study,the two most common applications of Ga_(2)O_(3) materials are introduced.The high breakdown electric field,high working temperature,and excellent Baliga’s figure-of-merit of Ga_(2)O_(3) represent an inspiring prospect for power electronic devices.In addition,the excellent absorption in deep-ultraviolet band provides new ideas for optoelectronic detectors and ensures the dramatic progress.Finally,the summary,challenges,and prospects of the Ga_(2)O_(3) materials and devices are presented and discussed.展开更多
基金supported by the National Natural Science Foun-dation of China(Grants No.61925110,U20A20207,61821091,62004184,62004186,61774081,62004147,51932004,52002219,and 51961145110)the Ministry of Science and Technology of China(Grant No.2018YFB0406500)+6 种基金the Strategic Priority Research Pro-gram of the Chinese Academy of Sciences(Grant No.XDB44000000)the Key Research Program of Frontier Sciences of the CAS(Grant No.QYZDB-SSW-JSC048)the Key-Area Research and Development Program of Guangdong Province(Grant No.2020B010174002)the Fundamental Research Funds for the Central Universities under(Grants No.WK2100000014 and WK2100000010)funding sup-port from the University of Science and Technology of China(Grant No.KY2100000109)the China Postdoctoral Science Foundation(Grants No.2020M671895 and BX20200320)the Opening Project of the Key Laboratory of Microelectronics Devices and Integration Technology at the Institute of Microelectronics of CAS,and the Key Laboratory of Nanodevices and Applications in Suzhou Institute of Nano-Tech and Nano-Bionics of CAS。
文摘Owing to the advantages of ultra-wide bandgap and rich material systems,gallium oxide(Ga_(2)O_(3))has emerged as a highly viable semiconductor material for new researches.This article mainly focuses on the growth processes,material characteristics,and applications of Ga_(2)O_(3).Compared with single crystals and the epitaxial growth of other wide-bandgap semiconductors,large-size and high-quality𝛽-Ga_(2)O_(3) single crystals can be efficiently grown with a low cost,making them highly competitive.Thanks to the availability of high-quality single crystals,epi-taxial films,and rich material systems,high-performance semiconductor devices based on Ga_(2)O_(3) go through a booming development in recent years.The defects and interfaces of Ga_(2)O_(3) are comprehensively analyzed owing to their significant influence on practical applications.In this study,the two most common applications of Ga_(2)O_(3) materials are introduced.The high breakdown electric field,high working temperature,and excellent Baliga’s figure-of-merit of Ga_(2)O_(3) represent an inspiring prospect for power electronic devices.In addition,the excellent absorption in deep-ultraviolet band provides new ideas for optoelectronic detectors and ensures the dramatic progress.Finally,the summary,challenges,and prospects of the Ga_(2)O_(3) materials and devices are presented and discussed.
