Since the pioneering work of Yaghi and co-workers on covalent organic frameworks(COFs) in 2005,multitudinous COFs targeting various applications including gas storage and separation,drug delivery,energy storage,cataly...Since the pioneering work of Yaghi and co-workers on covalent organic frameworks(COFs) in 2005,multitudinous COFs targeting various applications including gas storage and separation,drug delivery,energy storage,catalysis and optoelectronic devices have been developed.However,most of them show uniform pore structures with homogeneous porosity.2D heteropore COFs,a new branch of the COF community,have much less been explored mainly due to their challenging synthesis via conventional co-condensation methods.展开更多
Heterostructures based on new advanced materials offer a cornerstone for future optoelectronic devices with improved photoelectric performance.Band alignment is crucial for understanding the mechanism of charge carrie...Heterostructures based on new advanced materials offer a cornerstone for future optoelectronic devices with improved photoelectric performance.Band alignment is crucial for understanding the mechanism of charge carrier transportation and interface dynamics in heterostructures.Herein,we grew SnS_(2)/Bi_(2)X_(3)(X=Se,Te)van der Waals heterostructures by combining physical vapor deposition with chemical vapor deposition.The band alignment,measured by high-resolution X-ray photoelectron spectroscopy,suggested the successful design of type-Ⅰ SnS_(2)/Bi_(2)Te_(3) and type-Ⅱ SnS_(2)/Bi_(2)Te_(3) heterostructures.The SnS_(2)/Bi_(2)X_(3) heterostructure greatly improved the photoelectric response of a photoelectrochemical-type photodetector.The photocurrent densities in the type-Ⅰ SnS_(2)/Bi_(2)Te_(3) and type-Ⅱ SnS_(2)/Bi_(2)Te_(3) heterostructure-based devices were more than one order of magnitude higher than those of SnS_(2),Bi_(2)Te_(3),and Bi_(2)Te_(3).The improved photoelectric properties of the SnS_(2)/Bi_(2)X_(3) heterostructures can be explained as follows:(i)the photoexcited electrons and holes are effectively separated in the heterostructures;(ii)the charge-transfer efficiency and carrier density at the interface between the SnS_(2)/Bi_(2)X_(3) heterostructures and the electrolyte are greatly improved;(iii)the formed heterostructures expand the light absorption range.The photoelectric performance was further enhanced by efficient light trapping in the upright SnS_(2).The photoelectric response is higher in the type-Ⅰ SnS_(2)/Bi_(2)Te_(3) heterostructure than in the type-Ⅱ SnS_(2)/Bi_(2)Te_(3) heterostructure due to more efficient charge transportation at the type-Ⅰ SnS_(2)/Bi_(2)Te_(3) heterostructure/electrolyte interface.These results suggest that suitable type-Ⅰ and type-Ⅱ heterostructures can be developed for high-performance photodetectors and other optoelectronic devices.展开更多
文摘Since the pioneering work of Yaghi and co-workers on covalent organic frameworks(COFs) in 2005,multitudinous COFs targeting various applications including gas storage and separation,drug delivery,energy storage,catalysis and optoelectronic devices have been developed.However,most of them show uniform pore structures with homogeneous porosity.2D heteropore COFs,a new branch of the COF community,have much less been explored mainly due to their challenging synthesis via conventional co-condensation methods.
基金supported by the National Natural Science Foundation of China(12074311,11774288,11974279)the Natural Science Foundation of Shaanxi Province(2019JC-25)。
文摘Heterostructures based on new advanced materials offer a cornerstone for future optoelectronic devices with improved photoelectric performance.Band alignment is crucial for understanding the mechanism of charge carrier transportation and interface dynamics in heterostructures.Herein,we grew SnS_(2)/Bi_(2)X_(3)(X=Se,Te)van der Waals heterostructures by combining physical vapor deposition with chemical vapor deposition.The band alignment,measured by high-resolution X-ray photoelectron spectroscopy,suggested the successful design of type-Ⅰ SnS_(2)/Bi_(2)Te_(3) and type-Ⅱ SnS_(2)/Bi_(2)Te_(3) heterostructures.The SnS_(2)/Bi_(2)X_(3) heterostructure greatly improved the photoelectric response of a photoelectrochemical-type photodetector.The photocurrent densities in the type-Ⅰ SnS_(2)/Bi_(2)Te_(3) and type-Ⅱ SnS_(2)/Bi_(2)Te_(3) heterostructure-based devices were more than one order of magnitude higher than those of SnS_(2),Bi_(2)Te_(3),and Bi_(2)Te_(3).The improved photoelectric properties of the SnS_(2)/Bi_(2)X_(3) heterostructures can be explained as follows:(i)the photoexcited electrons and holes are effectively separated in the heterostructures;(ii)the charge-transfer efficiency and carrier density at the interface between the SnS_(2)/Bi_(2)X_(3) heterostructures and the electrolyte are greatly improved;(iii)the formed heterostructures expand the light absorption range.The photoelectric performance was further enhanced by efficient light trapping in the upright SnS_(2).The photoelectric response is higher in the type-Ⅰ SnS_(2)/Bi_(2)Te_(3) heterostructure than in the type-Ⅱ SnS_(2)/Bi_(2)Te_(3) heterostructure due to more efficient charge transportation at the type-Ⅰ SnS_(2)/Bi_(2)Te_(3) heterostructure/electrolyte interface.These results suggest that suitable type-Ⅰ and type-Ⅱ heterostructures can be developed for high-performance photodetectors and other optoelectronic devices.
