Atomic layer deposition in advanced display technologies:from photoluminescence to encapsulation

Driven by the growing demand for next-generation displays,the development of advanced luminescent materials with exceptional photoelectric properties is rapidly accelerating,with such materials including quantum dots and phosphors,etc.Nevertheless,the primary challenge preventing the practical application of these luminescent materials lies in meeting the required durability standards.Atomic layer deposition(ALD)has,therefore,been employed to stabilize luminescent materials,and as a result,flexible display devices have been fabricated through material modification,surface and interface engineering,encapsulation,cross-scale manufacturing,and simulations.In addition,the appropriate equipment has been developed for both spatial ALD and fluidized ALD to satisfy the low-cost,high-efficiency,and high-reliability manufacturing requirements.This strategic approach establishes the groundwork for the development of ultra-stable luminescent materials,highly efficient light-emitting diodes(LEDs),and thin-film packaging.Ultimately,this significantly enhances their potential applicability in LED illumination and backlighted displays,marking a notable advancement in the display industry.

Atomic layer deposition for quantum dots based devices

Quantum dots(QDs)are promising candidates for the next-generation optical and electronic devices due to the outstanding photoluminance efficiency,tunable bandgap and facile solution synthesis.Nevertheless,the limited optoelectronic performance and poor lifetime of QDs devices hinder their further applications.As a gas-phase surface treatment method,atomic layer deposition(ALD)has shown the potential in QDs surface modification and device construction owing to the atomic-level control and excellent uniformity/conformality.In this perspective,the attempts to utilize ALD techniques in QDs modification to improve the photoluminance efficiency,stability,carrier mobility,as well as interfacial carrier utilization are introduced.ALD proves to be successful in the photoluminance quantum yield(PLQY)enhancement due to the elimination of QDs surface dangling bonds and defects.The QDs stability and devices lifetime are improved greatly through the introduction of ALD barrier layers.Furthermore,the carrier transport is ameliorated efficiently by infilling interstitial spaces during ALD process.Attributed to the ultra-thin and dense coating on the interface,the improvement on optoelectronic performance is achieved.Finally,the challenges of ALD applications in QDs at present and several prospects including ALD process optimization,in-situ characterization and computational simulations are proposed.