The ＂island of inversion＂ has been known for over a quar- ter century, since Warburton et al. [1] proposed that nuclei with intruder ground states would constitute a 3x3 square with Z=10-12, N=20-22 in 1990. Uncover...The ＂island of inversion＂ has been known for over a quar- ter century, since Warburton et al. [1] proposed that nuclei with intruder ground states would constitute a 3x3 square with Z=10-12, N=20-22 in 1990. Uncovering the underlying inversion mechanism and exploring the scope of the island have attracted significant theoretical and experimental efforts in the following years. Now it is well known that the reduction of N=20 shell gap, which is likely caused by the strong nucleon-nucleon tensor interaction [2-5], allows the intrusion of neutron orbits from the pf shell into the sd shell and results in the inversion of the 2p-2h intruder and 0p-0h normal con- figurations of the nuclear ground states in this region. Mean- while, the original border of the ＂island of inversion＂ has been extended greatly [6-14].展开更多
Short-wavelength ultraviolet(UV)photons adversely affect hydrogenated amorphous silicon thin films,as well as on silicon heterojunction(SHJ)solar cells and modules.This research examines the impact and mechanisms of p...Short-wavelength ultraviolet(UV)photons adversely affect hydrogenated amorphous silicon thin films,as well as on silicon heterojunction(SHJ)solar cells and modules.This research examines the impact and mechanisms of photon-induced performance changes.UV A exposure disrupts Si-H bonds,significantly reducing hydrogen content in both intrinsic and doped hydrogenated amorphous silicon(a-Si:H)films.This disruption impairs the interface passivation effect,leading to the degradation of SHJ solar cells and modules,primarily indicated by a decrease in open-circuit voltage(V_(oc))and fill factor(FF).UV irradiation from the front side of SHJ solar cells reduces V_(oc)and FF by 1.38%and 2.28%,respectively,resulting in a 2.28%efficiency decline.Cells irradiated from the backside show decreases in V_(oc)and FF of approximately 1.96%and 2.73%,respectively,leading to an overall efficiency reduction of approximately 3.58%.However,subsequent light-soaking increases V_(oc)and FF by approximately 0.96%and 1.37%,respectively,for frontside-irradiated cells,achieving an overall efficiency improvement of approximately 2.51%.Thus,light-soaking effectively recovers performance losses caused by UV irradiation in SHJ solar cells.This research clarifies the mechanisms influencing the performance of a-Si:H thin films,SHJ solar cells,and modules under UV irradiation and light-soaking,offering significant contributions towards the development of highly efficient and reliable SHJ devices.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.11575006,11675003,11375017,11235001,11335002, 11375015,11320101004,and 11461141002)the China Postdoctoral Science Foundation(Grant Nos.2015M580007,and 2016T90007)the Chinese Major State Basic Research Development Program(Grant No.2013CB834400)
文摘The ＂island of inversion＂ has been known for over a quar- ter century, since Warburton et al. [1] proposed that nuclei with intruder ground states would constitute a 3x3 square with Z=10-12, N=20-22 in 1990. Uncovering the underlying inversion mechanism and exploring the scope of the island have attracted significant theoretical and experimental efforts in the following years. Now it is well known that the reduction of N=20 shell gap, which is likely caused by the strong nucleon-nucleon tensor interaction [2-5], allows the intrusion of neutron orbits from the pf shell into the sd shell and results in the inversion of the 2p-2h intruder and 0p-0h normal con- figurations of the nuclear ground states in this region. Mean- while, the original border of the ＂island of inversion＂ has been extended greatly [6-14].
基金supported by the Sichuan Science and Technology Program(2023YFG0098 and 2023ZYD0163)National Natural Science Foundation of China(T2322028)+2 种基金Science and Technology Commission of Shanghai Municipality(22ZR1473200)Chengdu Science and Technology Program(2024-JB00-00010-GX)Sichuan Province Key Laboratory of Display Science and Technology。
文摘Short-wavelength ultraviolet(UV)photons adversely affect hydrogenated amorphous silicon thin films,as well as on silicon heterojunction(SHJ)solar cells and modules.This research examines the impact and mechanisms of photon-induced performance changes.UV A exposure disrupts Si-H bonds,significantly reducing hydrogen content in both intrinsic and doped hydrogenated amorphous silicon(a-Si:H)films.This disruption impairs the interface passivation effect,leading to the degradation of SHJ solar cells and modules,primarily indicated by a decrease in open-circuit voltage(V_(oc))and fill factor(FF).UV irradiation from the front side of SHJ solar cells reduces V_(oc)and FF by 1.38%and 2.28%,respectively,resulting in a 2.28%efficiency decline.Cells irradiated from the backside show decreases in V_(oc)and FF of approximately 1.96%and 2.73%,respectively,leading to an overall efficiency reduction of approximately 3.58%.However,subsequent light-soaking increases V_(oc)and FF by approximately 0.96%and 1.37%,respectively,for frontside-irradiated cells,achieving an overall efficiency improvement of approximately 2.51%.Thus,light-soaking effectively recovers performance losses caused by UV irradiation in SHJ solar cells.This research clarifies the mechanisms influencing the performance of a-Si:H thin films,SHJ solar cells,and modules under UV irradiation and light-soaking,offering significant contributions towards the development of highly efficient and reliable SHJ devices.
