Dielectronic recombination is an important process in high temperature plasmas. In the present work, the KLn （n=L, M, N and O） DR resonance strengths of He-like to O-like xenon ions are measured at the Shanghai elec...Dielectronic recombination is an important process in high temperature plasmas. In the present work, the KLn （n=L, M, N and O） DR resonance strengths of He-like to O-like xenon ions are measured at the Shanghai electron beam ion trap using a fast electron beam energy scanning method. The experiment uncertainty reaches about 6% with significant improvement of statistics. A relativistic configuration interaction calculation is also made. Theoretical results agree with the experiment results within 15% in most cases.展开更多
基金supported by the National Key Research and Development Program of China under Grant No.2017YFA0402300
文摘Dielectronic recombination is an important process in high temperature plasmas. In the present work, the KLn （n=L, M, N and O） DR resonance strengths of He-like to O-like xenon ions are measured at the Shanghai electron beam ion trap using a fast electron beam energy scanning method. The experiment uncertainty reaches about 6% with significant improvement of statistics. A relativistic configuration interaction calculation is also made. Theoretical results agree with the experiment results within 15% in most cases.
