Strained Si and its related materials, such as strained SiGe and strained silicon-carbon alloy (Si-C), are receiving tremendous interest due to their high carrier mobility. In this study we carry out a basic investiga...Strained Si and its related materials, such as strained SiGe and strained silicon-carbon alloy (Si-C), are receiving tremendous interest due to their high carrier mobility. In this study we carry out a basic investigation of the change in microstructure of ion-implanted Si-C solid solution caused by rapid thermal annealing, because it is very important to realize a field-effect transistor made of this new material. The microstructures of arsenic-ion-, boron-ion-, and silicon-ion-implanted Si0.99C0.01 specimens upon thermal annealing are observed using transmission electron microscopy, and it is revealed that the rate of solid-state crystallization of ion-implanted Si-C is slower than that of the ion-implanted Si.展开更多
Si photonics becomes one of the research focuses in the field of photonics. Si-based light-emitting devices are one of the most important devices in this field. In this paper, we review the Si-based light-emitting dev...Si photonics becomes one of the research focuses in the field of photonics. Si-based light-emitting devices are one of the most important devices in this field. In this paper, we review the Si-based light-emitting devices fabricated by embedding Ge self-assembled quantum dots into optical microcavities. Ge self-assembled quantum dots emit light in the telecommunication wavelength range from 1.3 to 1.6 pro, for which Si is transparent. Ge self- assembled quantum dots were grown on silicon-on- insulator （SOI） by molecular beam epitaxy （MBE） in Stranski-Krastanov （S-K） mode. Then, electron beam lithography （EBL） was used to define the pattern of optical microcavities on the wafer. Finally, the pattern was transferred onto the Si/Ge slab by inductive coupled plasma （ICP） dry etching. Room-temperature photolumi- nescence （PL） was used to characterize the light-emitting properties of fabricated devices. The results showed that strong resonant light emission was observed in different optical microcavities. Significant enhancement of the intensity was obtained by the optical resonance. Based on the results of PL, we designed and fabricated current- injected light-emitting devices based on Ge self-assembled quantum dots in optical microcavities. Room-temperature resonant light emission was observed from Ge dots in a 3.8 μm microdisk resonator.展开更多
文摘Strained Si and its related materials, such as strained SiGe and strained silicon-carbon alloy (Si-C), are receiving tremendous interest due to their high carrier mobility. In this study we carry out a basic investigation of the change in microstructure of ion-implanted Si-C solid solution caused by rapid thermal annealing, because it is very important to realize a field-effect transistor made of this new material. The microstructures of arsenic-ion-, boron-ion-, and silicon-ion-implanted Si0.99C0.01 specimens upon thermal annealing are observed using transmission electron microscopy, and it is revealed that the rate of solid-state crystallization of ion-implanted Si-C is slower than that of the ion-implanted Si.
基金Acknowledgements The authors would like to thank Prof. Usami from Tohoku University for his help in the growth of Ge quantum dots. This work was supported by the Fundamental Research Funds for the Central Universities of Huazhong University of Science and Technology （No. 2011TS022） and the National Natural Science Foundation of China （Grant No. 61177049）.
文摘Si photonics becomes one of the research focuses in the field of photonics. Si-based light-emitting devices are one of the most important devices in this field. In this paper, we review the Si-based light-emitting devices fabricated by embedding Ge self-assembled quantum dots into optical microcavities. Ge self-assembled quantum dots emit light in the telecommunication wavelength range from 1.3 to 1.6 pro, for which Si is transparent. Ge self- assembled quantum dots were grown on silicon-on- insulator （SOI） by molecular beam epitaxy （MBE） in Stranski-Krastanov （S-K） mode. Then, electron beam lithography （EBL） was used to define the pattern of optical microcavities on the wafer. Finally, the pattern was transferred onto the Si/Ge slab by inductive coupled plasma （ICP） dry etching. Room-temperature photolumi- nescence （PL） was used to characterize the light-emitting properties of fabricated devices. The results showed that strong resonant light emission was observed in different optical microcavities. Significant enhancement of the intensity was obtained by the optical resonance. Based on the results of PL, we designed and fabricated current- injected light-emitting devices based on Ge self-assembled quantum dots in optical microcavities. Room-temperature resonant light emission was observed from Ge dots in a 3.8 μm microdisk resonator.
