Since copper has excellent properties such as malleability and conductivity,it is widely used in the electronics field.Copper sulfate plating is expanding further in fields requiring thick deposits such as for heat di...Since copper has excellent properties such as malleability and conductivity,it is widely used in the electronics field.Copper sulfate plating is expanding further in fields requiring thick deposits such as for heat dissipation boards and bumps for stress relaxation during semiconductor packaging.In this study,high-speed copper plating at 50 A/dm2 or more was achieved using a jet flow device.In addition,as a result of comparison with the low current density film,the current density had little effect on electrical conductivity and film surface structure.On the other hand,it was confirmed that the etching rate of the high current density film was greatly increased as the crystallites on the film surface became smaller than low current density film.Increase in productivity is expected due to shorter plating time enabled by film deposition at high current density.Furthermore,the increase of etching rate is expected to contribute to the suppression of undercuts that occur when removing the seed layer during wiring and bump fabrication.展开更多
文摘Since copper has excellent properties such as malleability and conductivity,it is widely used in the electronics field.Copper sulfate plating is expanding further in fields requiring thick deposits such as for heat dissipation boards and bumps for stress relaxation during semiconductor packaging.In this study,high-speed copper plating at 50 A/dm2 or more was achieved using a jet flow device.In addition,as a result of comparison with the low current density film,the current density had little effect on electrical conductivity and film surface structure.On the other hand,it was confirmed that the etching rate of the high current density film was greatly increased as the crystallites on the film surface became smaller than low current density film.Increase in productivity is expected due to shorter plating time enabled by film deposition at high current density.Furthermore,the increase of etching rate is expected to contribute to the suppression of undercuts that occur when removing the seed layer during wiring and bump fabrication.
