As essential components of numerous flexible and wearable optoelectronic devices,the flexible transparent conducting electrodes(TCEs)with sufficient optical transmittance and electric conductivity become more and more...As essential components of numerous flexible and wearable optoelectronic devices,the flexible transparent conducting electrodes(TCEs)with sufficient optical transmittance and electric conductivity become more and more important.In this work,we fabricated a large-area flexible TCE based on leaf vein-like hierarchical metal grids(HMG)comprising of mesoscale"trunk"and microscale"branches".The selfformed branched grids made the conducting paths distributing uniformly while the laser-etching trunk grids enabled to transport the collected electrons across long-distance.The Ag HMG exhibited high optical transmittance(-81%)with low sheet resistance(1.36Ωsq-1,which could be simply optimized through adjusting the grids’widths,spaces,and the sizes of the TiO2 colloidal crackle patterns.In addition,on the basis of such advanced HMG electrode,flexible electrochromic devices(ECDs)with remarkable cyclic performance were fabricated.The HMG with high transparency,conductivity,and flexibility provides a promising TCE for the next-generation flexible and wearable optoelectronic devices.展开更多
In this work, a GaN p-i-n diode based on Mg ion implantation for visible-blind UV detection is demonstrated.With an optimized implantation and annealing process, a p-GaN layer and corresponding GaN p-i-n photodiode ar...In this work, a GaN p-i-n diode based on Mg ion implantation for visible-blind UV detection is demonstrated.With an optimized implantation and annealing process, a p-GaN layer and corresponding GaN p-i-n photodiode are achieved via Mg implantation. As revealed in the UV detection characterizations, these diodes exhibit a sharp wavelength cutoff at 365 nm, high UV/visible rejection ratio of 1.2 × 10~4, and high photoresponsivity of 0.35 A/W, and are proved to be comparable with commercially available GaN p-n photodiodes. Additionally, a localized states-related gain mechanism is systematically investigated, and a relevant physics model of electricfield-assisted photocarrier hopping is proposed. The demonstrated Mg ion-implantation-based approach is believed to be an applicable and CMOS-process-compatible technology for GaN-based p-i-n photodiodes.展开更多
基金supported by the Shenzhen Basic Research Program(JCYJ20180306173007696)the Natural Science Foundation of Fujian Province(2017J01104)+4 种基金the Fundamental Research Funds for the Central Universities of China(20720160127,20720180013)Doctoral Fund of the Ministry of Education(20130121110018)NUS AcRF Tier 1(R-144-000-367-112)the“111”Project(B16029)the 1000 Talents Program Funding from the Xiamen University.
文摘As essential components of numerous flexible and wearable optoelectronic devices,the flexible transparent conducting electrodes(TCEs)with sufficient optical transmittance and electric conductivity become more and more important.In this work,we fabricated a large-area flexible TCE based on leaf vein-like hierarchical metal grids(HMG)comprising of mesoscale"trunk"and microscale"branches".The selfformed branched grids made the conducting paths distributing uniformly while the laser-etching trunk grids enabled to transport the collected electrons across long-distance.The Ag HMG exhibited high optical transmittance(-81%)with low sheet resistance(1.36Ωsq-1,which could be simply optimized through adjusting the grids’widths,spaces,and the sizes of the TiO2 colloidal crackle patterns.In addition,on the basis of such advanced HMG electrode,flexible electrochromic devices(ECDs)with remarkable cyclic performance were fabricated.The HMG with high transparency,conductivity,and flexibility provides a promising TCE for the next-generation flexible and wearable optoelectronic devices.
基金National Key R&D Program of China(2017YFB0403000)National Natural Science Foundation of China(NSFC)(61774081,91850112)+3 种基金Natural Science Foundation of Jiangsu Province(BK20161401)Fundamental Research Funds for the Central Universities(021014380085,021014380093,021014380098)Priority Academic Program Development of Jiangsu Higher Education InstitutionsScience and Technology Project of State Grid Corporation of China(SGSDDK00KJJS1600071)
文摘In this work, a GaN p-i-n diode based on Mg ion implantation for visible-blind UV detection is demonstrated.With an optimized implantation and annealing process, a p-GaN layer and corresponding GaN p-i-n photodiode are achieved via Mg implantation. As revealed in the UV detection characterizations, these diodes exhibit a sharp wavelength cutoff at 365 nm, high UV/visible rejection ratio of 1.2 × 10~4, and high photoresponsivity of 0.35 A/W, and are proved to be comparable with commercially available GaN p-n photodiodes. Additionally, a localized states-related gain mechanism is systematically investigated, and a relevant physics model of electricfield-assisted photocarrier hopping is proposed. The demonstrated Mg ion-implantation-based approach is believed to be an applicable and CMOS-process-compatible technology for GaN-based p-i-n photodiodes.
