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先进压水堆技术——“华龙一号”及福清5号机组
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作者 Ji Xing Chunning Jing +1 位作者 yemin dong Li Fan 《Engineering》 SCIE EI CAS CSCD 2023年第12期31-36,共6页
1.Introduction HPR1000 is an advanced mega-kilowatt-class third-generation pressurized water reactor(PWR)nuclear power technology developed by China,based on more than 30 years of experience in the scientific research... 1.Introduction HPR1000 is an advanced mega-kilowatt-class third-generation pressurized water reactor(PWR)nuclear power technology developed by China,based on more than 30 years of experience in the scientific research,design,equipment manufacturing,construction,and operation of nuclear power. 展开更多
关键词 operation CONSTRUCTION POWER
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Resistivity and Radio-Frequency Properties of Two-Generation Trap-Rich Silicon-on-Insulator Substrates
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作者 朱雷 常永伟 +5 位作者 高楠 苏鑫 董业民 费璐 魏星 王曦 《Chinese Physics Letters》 SCIE CAS CSCD 2018年第4期103-107,共5页
Crystal morphologies and resistivity of polysilicon trap-rich layers of two-generation trap-rich silicon-on-insulator(TR-SOI) substrates are studied. It is found that the resistivity of the trap-rich layer of generati... Crystal morphologies and resistivity of polysilicon trap-rich layers of two-generation trap-rich silicon-on-insulator(TR-SOI) substrates are studied. It is found that the resistivity of the trap-rich layer of generation 2(TR-G2)is higher than that of generation 1(TR-G1), although the crystal morphologies of the trap rich layers are the same. In addition, the rf performance of two-generation TR-SOI substrates is investigated by coplanar waveguide lines and inductors. The results show that both the rf loss and the second harmonic distortion of TR-G2 are smaller than those of TR-G1. These results can be attributed to the higher resistivity values of both the trap-rich layer and the high-resistivity silicon(HR-Si) substrate of TR-G2. Moreover, the rf performance of the TR-SOI substrate with thicker buried oxide is slightly better. The second harmonics of various TR-SOI substrates are simulated and evaluated with the harmonic quality factor model as well. It can be predicted that the TR-SOI substrate will see further improvement in rf performance if the resistivities of both the trap-rich layer and HR-Si substrate increase. 展开更多
关键词 抵抗力 无线电频率 底层 陷井 晶体形态学 性质 多晶硅 rf
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Anisotropic polaritons in van der Waals materials 被引量:2
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作者 Weiliang Ma Babar Shabbir +6 位作者 Qingdong Ou yemin dong Huanyang Chen Peining Li Xinliang Zhang Yuerui Lu Qiaoliang Bao 《InfoMat》 SCIE CAS 2020年第5期777-790,共14页
Polaritons in two-dimensional(2D)materials continues to garner significant attention due to their favorable ability of field-confinement and intriguing potential for low-loss and ultrafast optical and photonic devices... Polaritons in two-dimensional(2D)materials continues to garner significant attention due to their favorable ability of field-confinement and intriguing potential for low-loss and ultrafast optical and photonic devices.The recent experimental observation of in-plane anisotropic dispersion in natural van der Waals materials has revealed much richer physics as compared to isotropic plasmonic materials,which provides new insight to manipulate the polaritons and manufacture flat optical devices with unprecedented controls.Herein,we give an overview of the recent progress in in-plane anisotropic polaritons launched and visualized in the near-field range in 2D layered van der Waals materials.Furthermore,future prospects in this promising but emerging field are featured on the basis of its peculiar applications.This review article will stimulate the scientific community to explore other hyperbolic materials and structures in order to develop optical technologies with novel functionalities and further improve the understanding of the exotic photonic phenomena. 展开更多
关键词 hyperbolic materials in-plane anisotropy optical and photonic devices POLARITONS scanning nearfield optical microscopy
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