Abstract: Transient photocurrents induced by shoft light pulses at lanice-mathed GaAs/Alx.Ga1-x multiple quantum well (MQW) electrodes were studied as a function of electrode potential. Dual exponential photocurrent d...Abstract: Transient photocurrents induced by shoft light pulses at lanice-mathed GaAs/Alx.Ga1-x multiple quantum well (MQW) electrodes were studied as a function of electrode potential. Dual exponential photocurrent decay indents were observed at various potentials. By analysis of the dual exponented decay transients, information on steady state photocurrents (Is). surface collection of photoexcoted mmority cCarriers(GO) and lifetimes of surfaCe states (Ts) was obtained. The kinetic behaviors of photoprocesses at illuminated MQW/electrolyte interface were discussed.展开更多
文摘Abstract: Transient photocurrents induced by shoft light pulses at lanice-mathed GaAs/Alx.Ga1-x multiple quantum well (MQW) electrodes were studied as a function of electrode potential. Dual exponential photocurrent decay indents were observed at various potentials. By analysis of the dual exponented decay transients, information on steady state photocurrents (Is). surface collection of photoexcoted mmority cCarriers(GO) and lifetimes of surfaCe states (Ts) was obtained. The kinetic behaviors of photoprocesses at illuminated MQW/electrolyte interface were discussed.
